Samsung electronics co., ltd. (20240136398). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Wookhyun Kwon of Suwon-si (JP)
Heonjong Shin of Suwon-si (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136398 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
A semiconductor device described in the abstract includes various patterns and layers to create a functional device. Here is a simplified explanation of the abstract:
- The semiconductor device consists of a substrate with an active pattern, a channel pattern, a source/drain pattern, a gate electrode, and an insulation pattern.
- The channel pattern contains semiconductor patterns that are stacked vertically and spaced apart.
- The source/drain pattern is connected to the semiconductor patterns.
- The gate electrode includes inner electrodes below the semiconductor patterns, except the lowermost one.
- The insulation pattern is positioned between the first semiconductor pattern and the active pattern, consisting of a dielectric pattern and a protection layer.
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- Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and other consumer electronics.
- Problems Solved
This technology addresses the need for more efficient and compact semiconductor devices by optimizing the layout and design of the various patterns and layers within the device structure.
- Benefits
The benefits of this technology include improved performance, increased functionality, and potentially reduced power consumption in semiconductor devices.
- Potential Commercial Applications
The semiconductor device innovation could find commercial applications in the semiconductor industry for the production of next-generation electronic devices, leading to advancements in technology and potentially new market opportunities.
- Possible Prior Art
Prior art in the field of semiconductor device manufacturing may include similar techniques for optimizing device structures, improving performance, and enhancing functionality. Research and patents related to vertical stacking of semiconductor patterns and advanced insulation patterns could be relevant in this context.
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- Unanswered Questions
- How does this technology compare to existing semiconductor device structures?
This article does not provide a direct comparison with existing semiconductor device structures in terms of performance, efficiency, or manufacturing processes.
- What are the specific materials used in the fabrication of the semiconductor device?
The article does not detail the specific materials used in the fabrication process, such as the types of semiconductors, dielectrics, or protection layers employed in the device.
Original Abstract Submitted
a semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern, a source/drain pattern, a gate electrode, and an insulation pattern. the channel pattern may include semiconductor patterns that are spaced apart from each other and vertically stacked. a lowermost one of the semiconductor patterns may be a first semiconductor pattern. the source/drain pattern may be connected to the semiconductor patterns. the gate electrode may be on the semiconductor patterns and may include a plurality of inner electrodes below the semiconductor patterns except the first semiconductor pattern. the insulation pattern may be between the first semiconductor pattern and the active pattern. the insulation pattern may include a dielectric pattern and a protection layer. the protection layer may be between the dielectric pattern and the first semiconductor pattern. the protection layer may be between the dielectric pattern and the active pattern.
