18530113. SEMICONDUCTOR DEVICES COMPRISING TRANSISTORS HAVING INCREASED THRESHOLD VOLTAGE AND RELATED METHODS AND SYSTEMS simplified abstract (Micron Technology, Inc.)
Contents
- 1 SEMICONDUCTOR DEVICES COMPRISING TRANSISTORS HAVING INCREASED THRESHOLD VOLTAGE AND RELATED METHODS AND SYSTEMS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES COMPRISING TRANSISTORS HAVING INCREASED THRESHOLD VOLTAGE AND RELATED METHODS AND SYSTEMS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICES COMPRISING TRANSISTORS HAVING INCREASED THRESHOLD VOLTAGE AND RELATED METHODS AND SYSTEMS
Organization Name
Inventor(s)
Kamal M. Karda of Boise ID (US)
Kirk D. Prall of Boise ID (US)
Durai Vishak Nirmal Ramaswamy of Boise ID (US)
SEMICONDUCTOR DEVICES COMPRISING TRANSISTORS HAVING INCREASED THRESHOLD VOLTAGE AND RELATED METHODS AND SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18530113 titled 'SEMICONDUCTOR DEVICES COMPRISING TRANSISTORS HAVING INCREASED THRESHOLD VOLTAGE AND RELATED METHODS AND SYSTEMS
Simplified Explanation
The patent application describes a transistor with threshold voltage control gates and active control gates on opposing sides of a channel region, separated by a dielectric region. This transistor is used in a semiconductor device comprising memory cells.
- The transistor includes threshold voltage control gates and active control gates.
- The gates are positioned on opposing sides of a channel region.
- A dielectric region separates the gates from the channel region.
- The semiconductor device contains memory cells with these transistors.
Potential Applications
This technology can be applied in:
- Memory devices
- Integrated circuits
- Microprocessors
Problems Solved
This technology helps in:
- Improving memory cell performance
- Enhancing semiconductor device efficiency
Benefits
The benefits of this technology include:
- Increased memory cell reliability
- Enhanced device speed and performance
Potential Commercial Applications
This technology can be used in:
- Consumer electronics
- Automotive electronics
- Telecommunications industry
Possible Prior Art
One possible prior art for this technology could be the use of similar transistor structures in memory devices and integrated circuits.
Unanswered Questions
How does this technology compare to existing transistor designs in terms of performance and efficiency?
This article does not provide a direct comparison with existing transistor designs to evaluate performance and efficiency.
What are the specific manufacturing processes involved in creating these transistors and memory cells?
The article does not detail the specific manufacturing processes used to create the transistors and memory cells.
Original Abstract Submitted
A transistor comprising threshold voltage control gates. The transistor also comprises active control gates adjacent opposing first sides of a channel region, the threshold voltage control gates adjacent opposing second sides of the channel region, and a dielectric region between the threshold voltage control gates and the channel region and between the active control gates and the channel region. A semiconductor device comprising memory cells comprising the transistor is also disclosed, as are systems comprising the memory cells, methods of forming the semiconductor device, and methods of operating a semiconductor device.
