Samsung electronics co., ltd. (20240113185). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113185 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The integrated circuit (IC) device described in the abstract includes a selection gate structure with a floating gate line, a control gate line, and an insulating spacer. The selection gate structure has a first sidewall on the control gate line and a second sidewall closer to the substrate. The selection gate structure also includes a selection gate line and a lower metal nitride film between the substrate and the selection gate line.
- The IC device includes a floating gate line and a control gate line on a substrate.
- An insulating spacer covers the sidewalls of the floating gate line and the control gate line.
- A selection gate structure is separate from the floating gate line and the control gate line, with an insulating spacer in between.
- The selection gate structure has a first sidewall on the control gate line and a second sidewall closer to the substrate.
- The selection gate structure includes a selection gate line and a lower metal nitride film between the substrate and the selection gate line.
Potential Applications
This technology could be applied in:
- Flash memory devices
- Solid-state drives
- Microcontrollers
Problems Solved
This technology helps in:
- Improving memory storage capacity
- Enhancing data retention in memory devices
Benefits
The benefits of this technology include:
- Higher performance in memory devices
- Increased reliability and durability
- Enhanced data security
Potential Commercial Applications
This technology could be commercially applied in:
- Consumer electronics
- Automotive electronics
- Industrial automation
Possible Prior Art
One possible prior art for this technology could be the use of insulating spacers in memory devices to improve performance and reliability.
Unanswered Questions
How does this technology compare to existing memory storage solutions in terms of speed and capacity?
This article does not provide a direct comparison with existing memory storage solutions in terms of speed and capacity. Further research and testing would be needed to make a comprehensive comparison.
What are the potential challenges in implementing this technology on a large scale for commercial production?
The article does not address the potential challenges in implementing this technology on a large scale for commercial production. Factors such as cost, scalability, and compatibility with existing manufacturing processes would need to be considered.
Original Abstract Submitted
an integrated circuit (ic) device includes a floating gate line and a control gate line on a substrate, an insulating spacer covering a sidewall of each of the floating gate line and the control gate line, and a selection gate structure apart from the floating gate line and the control gate line with the insulating spacer therebetween, the selection gate structure having a first sidewall on the control gate line and a second sidewall closer to the substrate than is the first sidewall, wherein the selection gate structure includes a selection gate line and a lower metal nitride film between the substrate and a bottom surface of the selection gate line and between a sidewall of the selection gate line and the insulating spacer, the lower metal nitride film having a first uppermost surface that is closer to the substrate than is an uppermost surface of the insulating spacer.
