Samsung electronics co., ltd. (20240096953). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096953 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The abstract describes an integrated circuit (IC) device with specific gate dielectric films and regions on a substrate.
- Channel region on a substrate
- Gate on the channel region
- First gate dielectric film with two portions - one in contact with the channel region and the other apart from it
- Second gate dielectric film with a portion in contact with the second portion of the first gate dielectric film at a higher vertical level than the gate's top surface
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the development of advanced IC devices with improved performance and efficiency.
Problems Solved
This technology addresses the need for enhanced gate dielectric films in IC devices to optimize their functionality and reliability.
Benefits
The benefits of this technology include increased operational efficiency, improved device performance, and potentially longer lifespan of IC devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the manufacturing of high-performance electronic devices such as smartphones, computers, and other consumer electronics.
Possible Prior Art
One possible prior art in this field could be the development of similar gate dielectric film structures in IC devices, but with different configurations or materials.
Unanswered Questions
How does this technology compare to existing gate dielectric film structures in terms of performance and reliability?
The article does not provide a direct comparison between this technology and existing gate dielectric film structures in terms of performance and reliability. Further research or testing may be needed to determine the advantages of this innovation over current solutions.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
The article does not address the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes. Factors such as cost, scalability, and compatibility with existing production methods could be significant considerations that need to be explored further.
Original Abstract Submitted
an integrated circuit (ic) device is provided. the ic device includes: a channel region on a substrate; a gate on the channel region; a first gate dielectric film including a first portion and a second portion, the first portion being in contact with the channel region between the channel region and the gate, and the second portion being apart from the channel region; and a second gate dielectric film including a third portion, the third portion being in contact with the second portion of the first gate dielectric film at a vertical level farther from the substrate than a top surface of the gate.
