20240021674. TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES simplified abstract (SKYWORKS SOLUTIONS, INC.)
Contents
TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES
Organization Name
Inventor(s)
Tzung-Yin Lee of Costa Mesa CA (US)
TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240021674 titled 'TRANSISTORS FOR RADIO-FREQUENCY CIRCUITS AND DEVICES
Simplified Explanation
The abstract describes a transistor design that includes multiple source regions and drain regions arranged in an alternating manner. These regions are implemented as a first type of active region. The transistor also includes multiple gate structures implemented relative to the source and drain regions. Applying a voltage to each gate structure creates a conductive channel between a corresponding pair of source and drain regions. Additionally, the transistor includes a body region, implemented as a second type of active region, which provides the conductive channel when the voltage is applied to the corresponding gate structure. A recessed region is defined by the end of each drain region and one or both of the adjacent gate structures.
- The patent describes a transistor design with alternating source and drain regions.
- The source and drain regions are implemented as a first type of active region.
- Gate structures are positioned relative to the source and drain regions.
- Applying a voltage to each gate structure creates a conductive channel between a pair of source and drain regions.
- A body region, implemented as a second type of active region, provides the conductive channel when the voltage is applied to the corresponding gate structure.
- A recessed region is formed by the end of each drain region and one or both of the adjacent gate structures.
Potential Applications:
- Integrated circuits
- Electronics manufacturing
- Semiconductor industry
Problems Solved:
- Improved transistor performance and efficiency
- Enhanced conductivity and channel formation
- Reduction of leakage current
Benefits:
- Higher transistor density
- Increased speed and performance of electronic devices
- Lower power consumption
- Improved reliability and stability
Original Abstract Submitted
a transistor can include a plurality of source regions and a plurality of drain regions arranged in an alternating manner, with each of the source regions and the drain regions being implemented as a first type active region, and a plurality of gate structures implemented relative to the source regions and the drain regions such that application of a voltage to each gate structure results in formation of a conductive channel between a respective pair of source and drain regions. the transistor can further include a body region configured to provide the respective conductive channel upon the application of the voltage to the corresponding gate structure, with the body region being implemented as a second type active region. the transistor can further include a recessed region defined by an end of each drain region and one or both of the gate structures adjacent to the drain region.
