Samsung electronics co., ltd. (20240096960). INTEGRATED CIRCUIT DEVICE simplified abstract

INTEGRATED CIRCUIT DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Seunghyun Song of Suwon-si (KR)

Minsuk Kim of Suwon-si (KR)

Pilkwang Kim of Suwon-si (KR)

Takeshi Okagaki of Suwon-si (KR)

Geunmyeong Kim of Suwon-si (KR)

Ahyoung Kim of Suwon-si (KR)

Yoonsuk Kim of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096960 titled 'INTEGRATED CIRCUIT DEVICE

Simplified Explanation

The integrated circuit device described in the patent application includes a unique back side interconnection structure, a fin-type active area, a metal silicide film, gate structures, and source/drain areas on the active substrate.

• Back side interconnection structure extending in a first horizontal direction
• Active substrate with a fin-type active area and metal silicide film
• Plurality of gate structures extending in a second horizontal direction perpendicular to the first direction
• First and second source/drain areas spaced apart with gate structures in between
• First source/drain area directly contacts the active substrate, while the second is insulated from it

Potential Applications

The technology described in this patent application could be applied in the manufacturing of advanced integrated circuits, particularly in the development of high-performance semiconductor devices.

Problems Solved

This technology solves the problem of optimizing the layout and structure of integrated circuits to improve performance and efficiency, especially in terms of reducing resistance and enhancing electrical connectivity.

Benefits

The benefits of this technology include improved functionality and performance of integrated circuits, increased efficiency in data processing, and potentially lower power consumption in electronic devices.

Potential Commercial Applications

• "Innovative Back Side Interconnection Structure for Advanced Integrated Circuits"

Possible Prior Art

There may be prior art related to the integration of back side interconnection structures and active substrates in semiconductor devices, but specific examples are not provided in this patent application.

How does this technology compare to existing back side interconnection structures in terms of performance and efficiency?

The patent application does not provide a direct comparison with existing technologies, so it is unclear how this innovation stands out in the field.

What are the specific manufacturing processes involved in implementing this technology, and how do they contribute to the overall performance of the integrated circuit device?

The patent application does not delve into the detailed manufacturing processes or their impact on the device's performance, leaving a gap in understanding the practical application of this technology.

Original Abstract Submitted

an integrated circuit device includes a back side interconnection structure extending in a first horizontal direction. an active substrate includes a fin-type active area extending in the first horizontal direction on the back side interconnection structure. a metal silicide film is between the back side interconnection structure and the active substrate. a plurality of gate structures extends in a second horizontal direction perpendicular to the first horizontal direction on the active substrate. a first source/drain area and a second source/drain area are spaced apart from each other in the first horizontal direction with the plurality of gate structures therebetween on the active substrate. the first source/drain area directly contacts the active substrate. the second source/drain area is spaced apart from the active substrate and insulated from the active substrate.