Samsung electronics co., ltd. (20240105724). THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

DONGHOON Hwang of Suwon-si (KR)

MYUNGIL Kang of Suwon-si (KR)

MINCHAN Gwak of Suwon-si (KR)

Kyungho Kim of Suwon-si (KR)

Kyung Hee Cho of Suwon-si (KR)

DOYOUNG Choi of Suwon-si (KR)

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105724 titled 'THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The three-dimensional semiconductor device described in the abstract includes multiple active regions stacked on top of each other, each with channel patterns and source/drain patterns connected to them. The device also features gate electrodes, lower and upper contacts, and active contacts for electrical connections.

• The device consists of a first active region with a lower channel pattern and lower source/drain pattern, and a second active region stacked on top with an upper channel pattern and upper source/drain pattern.
• A gate electrode is present on both the lower and upper channel patterns for control of the device.
• The lower contact is electrically connected to the lower source/drain pattern and has a bar shape extending in a specific direction.
• Active contacts are coupled to the lower contact and upper source/drain pattern for further electrical connections.
• The lower source/drain pattern is wider in one direction compared to the width of the lower contact in the same direction.

Potential Applications

The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and other consumer electronics.

Problems Solved

This innovation addresses the need for more efficient and compact semiconductor devices by utilizing stacked active regions and optimized contact structures, improving overall device performance and functionality.

Benefits

The three-dimensional semiconductor device offers increased integration density, improved electrical connectivity, and enhanced performance compared to traditional two-dimensional devices. This results in more efficient and powerful electronic devices.

Potential Commercial Applications

• "Three-Dimensional Semiconductor Device for Enhanced Performance and Integration Density"

Possible Prior Art

There may be prior art related to three-dimensional semiconductor devices with stacked active regions and optimized contact structures, but specific examples are not provided in this article.

How does this technology impact power consumption in electronic devices?

The article does not delve into the potential effects of this technology on power efficiency in electronic devices. Further research and analysis would be needed to understand the impact on power consumption.

What are the potential challenges in manufacturing these three-dimensional semiconductor devices at scale?

The article does not discuss the manufacturing process or potential challenges that may arise when producing these devices in large quantities. Understanding the scalability and production challenges would be crucial for commercial implementation.

Original Abstract Submitted

a three-dimensional semiconductor device includes a first active region on a substrate, the first active region including a lower channel pattern and a lower source/drain pattern connected to the lower channel pattern, a second active region stacked on the first active region, the second active region including an upper channel pattern and an upper source/drain pattern connected to the upper channel pattern, a gate electrode on the lower channel pattern and the upper channel pattern, a lower contact electrically connected to the lower source/drain pattern, the lower contact having a bar shape extending on the lower source/drain pattern in a first direction, a first active contact coupled to the lower contact, and a second active contact coupled to the upper source/drain pattern. a first width of the lower source/drain pattern in a second direction is larger than a second width of the lower contact in the second direction.