20240055509. NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.)
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
Inventor(s)
Chunhua Zhou of Suzhou City (CN)
Qiyue Zhao of Suzhou City (CN)
Jingyu Shen of Suzhou City (CN)
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240055509 titled 'NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a nitride-based semiconductor device with a unique structure involving multiple layers and heterojunctions.
- The device includes a first nitride-based semiconductor layer with a drift region and doped barrier regions defining an aperture.
- A nitride-based multiple semiconductor layer structure is placed over the first layer, with separate first and second heterojunctions.
- A gate electrode aligns vertically with the aperture in the drift region, and a gate insulator layer is positioned between the multiple semiconductor layer and the gate electrode.
- A source electrode is located over the first semiconductor layer and abuts against the heterojunctions of the multiple semiconductor layer structure.
Potential Applications
- Power electronics
- High-frequency communication devices
- Optoelectronic devices
Problems Solved
- Improved performance and efficiency of semiconductor devices
- Enhanced control and functionality in electronic applications
Benefits
- Higher power handling capabilities
- Increased speed and reliability
- Better overall performance in various electronic devices
Original Abstract Submitted
a nitride-based semiconductor device includes a first nitride-based semiconductor layer, a nitride-based multiple semiconductor layer, a gate electrode, a gate insulator layer, and a source electrode. the first nitride-based semiconductor layer includes a drift region and at least two doped barrier regions defining an aperture in the drift region. the nitride-based multiple semiconductor layer structure is disposed over the first nitride-based semiconductor layer and has a first heterojunction and a second heterojunction which are separated from each other. the gate electrode is received by the nitride-based multiple semiconductor layer structure and vertically aligns with the aperture in the drift region. the gate insulator layer is disposed between the nitride-based multiple semiconductor layer structure and the gate electrode. the source electrode is disposed over the first nitride-based semiconductor layer and abuts against the first and second heterojunctions of the nitride-based multiple semiconductor layer structure.
