20240038873. SEMICONDUCTOR DEVICES INCLUDING GATE SPACER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICES INCLUDING GATE SPACER

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Bongseok Suh of Seoul (KR)

Daewon Kim of Hwaseong-si (KR)

Beomjin Park of Hwaseong-si (KR)

Sukhyung Park of Seoul (KR)

Sungil Park of Suwon-si (KR)

Jaehoon Shin of Suwon-si (KR)

Bongseob Yang of Suwon-si (KR)

Junggun You of Ansan-si (KR)

Jaeyun Lee of Hwaseong-si (KR)

SEMICONDUCTOR DEVICES INCLUDING GATE SPACER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240038873 titled 'SEMICONDUCTOR DEVICES INCLUDING GATE SPACER

Simplified Explanation

The abstract describes a semiconductor device that includes various components such as active regions, gate electrodes, drain regions, undercut regions, and gate spacers. The first active region is defined on a substrate, and the first gate electrode is placed across this active region. The first drain region is positioned adjacent to the first gate electrode within the first active region. An undercut region is present between the first active region and the first gate electrode. Additionally, a first gate spacer is located on the side surface of the first gate electrode and extends into the undercut region.

• The semiconductor device includes a first active region, first gate electrode, first drain region, undercut region, and first gate spacer.
• The first active region is defined on a substrate.
• The first gate electrode is placed across the first active region.
• The first drain region is positioned adjacent to the first gate electrode within the first active region.
• An undercut region is present between the first active region and the first gate electrode.
• A first gate spacer is located on the side surface of the first gate electrode and extends into the undercut region.

Potential applications of this technology:

• Semiconductor devices can be used in various electronic devices such as computers, smartphones, and tablets.
• This technology can be applied in the manufacturing of integrated circuits and microprocessors.

Problems solved by this technology:

• The presence of the undercut region helps in improving the performance and efficiency of the semiconductor device.
• The first gate spacer provides additional support and stability to the first gate electrode.

Benefits of this technology:

• Enhanced performance and efficiency of the semiconductor device.
• Improved stability and reliability of the first gate electrode.
• Increased functionality and capabilities of electronic devices that incorporate this semiconductor device.

Original Abstract Submitted

a semiconductor device includes a first active region defined on a substrate, a first gate electrode across the first active region, a first drain region in the first active region at a position adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on a side surface of the first gate electrode and extending into the undercut region.