International business machines corporation (20240096948). STRUCTURE HAVING ENHANCED GATE RESISTANCE simplified abstract
Contents
- 1 STRUCTURE HAVING ENHANCED GATE RESISTANCE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 STRUCTURE HAVING ENHANCED GATE RESISTANCE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
STRUCTURE HAVING ENHANCED GATE RESISTANCE
Organization Name
international business machines corporation
Inventor(s)
Terence Hook of Jericho Center VT (US)
STRUCTURE HAVING ENHANCED GATE RESISTANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096948 titled 'STRUCTURE HAVING ENHANCED GATE RESISTANCE
Simplified Explanation
The abstract describes a semiconductor structure with enhanced gate resistance achieved by incorporating a shunting material pillar along the sidewall of at least one gate structure, with lower resistivity than the gate structure.
- The semiconductor structure includes stacked nanosheet devices.
- The shunting material pillar is positioned laterally adjacent to the gate structure.
- The resistivity of the shunting material pillar is lower than that of the gate structure.
Potential Applications
This technology could be applied in:
- Advanced semiconductor devices
- High-performance electronics
Problems Solved
This innovation addresses:
- Gate resistance in semiconductor structures
- Improving overall device performance
Benefits
The benefits of this technology include:
- Enhanced gate resistance
- Improved device reliability
- Increased efficiency in electronic devices
Potential Commercial Applications
This technology could be utilized in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art could be the use of different materials to modify the resistivity of semiconductor structures.
What are the manufacturing processes involved in implementing this technology?
Manufacturing processes for implementing this technology may include:
- Deposition of the shunting material pillar
- Etching processes to create the sidewall structure
- Integration of the gate structure with the shunting material pillar
How does the presence of the shunting material pillar affect the overall performance of the semiconductor device?
The shunting material pillar helps reduce gate resistance, leading to improved performance and efficiency of the semiconductor device.
Original Abstract Submitted
semiconductor structures such as, for example, stacked nanosheet devices, having enhanced gate resistance are provided. the enhanced gate resistance is obtained by providing a shunting material pillar in the structure and along a sidewall (or opposing sidewalls) of at least one gate structure. the shunting material pillar has a resistivity that is lower than a resistivity of the gate structure that it is laterally adjacent to.
