Kabushiki kaisha toshiba (20240097012). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing semiconductor devices in terms of efficiency and performance?
- 1.11 What are the potential limitations or challenges in implementing this technology on a larger scale?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hiroko Itokazu of Kawasaki Kanagawa (JP)
Yoko Iwakaji of Meguro Tokyo (JP)
Keiko Kawamura of Yokohama Kanagawa (JP)
Tomoko Matsudai of Shibuya Tokyo (JP)
Kaori Fuse of Yokohama Kanagawa (JP)
Takako Motai of Yokohama Kanagawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097012 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes multiple electrodes and insulating films to control the flow of electricity within the semiconductor part. Here are the key points explained in bullet form:
- Semiconductor device with semiconductor part, electrodes, and insulating films for controlling electricity flow.
- First and second electrodes on back and front surfaces of the semiconductor part.
- Third electrode between the first and second electrodes with a first insulating film.
- Fourth and control electrodes between the second and third electrodes, extending into the semiconductor part with a second insulating film.
- Fourth electrode positioned between the semiconductor part and the control electrode with a third insulating film.
- Fourth electrode electrically connected to the third electrode.
Potential Applications
The technology described in this semiconductor device could be applied in various electronic devices such as sensors, transistors, and integrated circuits.
Problems Solved
This technology helps in controlling the flow of electricity within the semiconductor part, improving the efficiency and performance of electronic devices.
Benefits
The benefits of this technology include enhanced electrical conductivity, improved device reliability, and precise control over the flow of electricity.
Potential Commercial Applications
The semiconductor device could find applications in industries such as telecommunications, consumer electronics, automotive, and healthcare, where precise control over electrical flow is crucial.
Possible Prior Art
One possible prior art could be the use of insulating films in semiconductor devices to control the flow of electricity, but the specific configuration described in this patent application may be unique.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of efficiency and performance?
The article does not provide a direct comparison with existing semiconductor devices in terms of efficiency and performance. Further research or testing would be needed to make a comparison.
What are the potential limitations or challenges in implementing this technology on a larger scale?
The article does not address potential limitations or challenges in implementing this technology on a larger scale. Factors such as production costs, scalability, and compatibility with existing systems could be potential areas of concern that need to be explored further.
Original Abstract Submitted
a semiconductor device includes a semiconductor part, first to fourth electrodes and a control electrode. the first and second electrodes are provided respectively on back and front surfaces of the semiconductor part. the third electrode is provided between the first and second electrodes, and provided in the semiconductor part with a first insulating film interposed. the fourth and control electrodes are provided between the second and third electrodes. the fourth and control electrodes extends into the semiconductor part from the front side and faces the third electrode with a second insulating film interposed. the fourth electrode is positioned between the semiconductor part and the control electrode. the first insulating film extends between the semiconductor part and the control electrode and between the semiconductor part and the fourth electrode. the fourth electrode faces the control electrode with a third insulating film interposed, and is electrically connected to the third electrode.
