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Category:H01L29/49
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Pages in category "H01L29/49"
The following 134 pages are in this category, out of 134 total.
1
- 17455941. STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET simplified abstract (International Business Machines Corporation)
- 17545610. STACKED FETS WITH NON-SHARED WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17637479. THIN FILM TRANSISTOR, DISPLAY PANEL AND DISPLAY DEVICE simplified abstract (BOE Technology Group Co., Ltd.)
- 17700998. METAL GATE FIN ELECTRODE STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17731615. SEMICONDUCTOR DEVICES HAVING STRESSED ACTIVE REGIONS THEREIN THAT SUPPORT ENHANCED CARRIER MOBILITY simplified abstract (Samsung Electronics Co., Ltd.)
- 17741270. SEMICONDUCTOR DEVICES WITH METAL INTERCALATED HIGH-K CAPPING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17809030. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17818933. 2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 17833749. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Micron Technology, Inc.)
- 17836399. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17843970. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17849154. DEVICE WITH MODIFIED WORK FUNCTION LAYER AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17852658. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17892415. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17894169. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17933568. VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract (QUALCOMM Incorporated)
- 17945528. FERROELECTRIC MATERIAL, AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17956296. TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract (Intel Corporation)
- 17958293. EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract (Intel Corporation)
- 17958805. SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17983856. SEMICONDUCTOR ELEMENT AND MULTIPLEXER INCLUDING A PLURALITY OF SEMICONDUCTOR ELEMENTS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18046656. SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF CHANNEL LAYERS simplified abstract (Samsung Electronics Co., Ltd.)
- 18053157. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18150809. SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18150861. Volume-less Fluorine Incorporation Method simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18151575. METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152938. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18153571. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18153597. AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18155887. SILICIDE-SANDWICHED SOURCE/DRAIN REGION AND METHOD OF FABRICATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18158641. Semiconductor Device and Method of Manufacture simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18202085. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18234129. CONTACT ARRANGEMENTS FOR TRANSISTORS simplified abstract (Micron Technology, Inc.)
- 18298678. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18322234. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18338869. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18346977. METHOD OF REDUCING VOIDS AND SEAMS IN TRENCH STRUCTURES BY FORMING SEMI-AMORPHOUS POLYSILICON simplified abstract (Texas Instruments Incorporated)
- 18364521. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18370663. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18379083. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18388419. Gate Structures For Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18397700. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18447580. MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18471715. INTERCONNECTION LAYER STRUCTURES INCLUDING TWO-DIMENSIONAL (2D) MATERIAL, ELECTRONIC DEVICES INCLUDING INTERCONNECTION LAYER STRUCTURES, AND ELECTRONIC APPARATUSES INCLUDING ELECTRONIC DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18478373. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18479934. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Japan Display Inc.)
- 18511064. WORK FUNCTION DESIGN TO INCREASE DENSITY OF NANOSHEET DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519964. SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS simplified abstract (Micron Technology, Inc.)
- 18521584. FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522064. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522265. METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526290. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526429. METHOD FOR FORMING SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18527151. SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
B
I
- Intel corporation (20240105508). INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM simplified abstract
- Intel corporation (20240105822). STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract
- Intel corporation (20240105852). TOP-GATE DOPED THIN FILM TRANSISTOR simplified abstract
- Intel corporation (20240113116). EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract
- Intel corporation (20240113212). TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract
- Intel corporation (20240128269). VOLTAGE REGULATOR CIRCUIT INCLUDING ONE OR MORE THIN-FILM TRANSISTORS simplified abstract
- Intel Corporation patent applications on April 18th, 2024
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on January 25th, 2024
- Intel Corporation patent applications on March 28th, 2024
Q
- Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract
- QUALCOMM Incorporated patent applications on February 15th, 2024
- QUALCOMM Incorporated patent applications on March 21st, 2024
S
- Samsung electronics co., ltd. (20240096879). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096956). INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240128161). INTEGRATED CIRCUIT DEVICES simplified abstract
- Samsung electronics co., ltd. (20240128319). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240128347). SEMICONDUCTOR DEVICE simplified abstract
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- SK hynix Inc. patent applications on January 18th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240096630). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096643). SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096880). WORK FUNCTION DESIGN TO INCREASE DENSITY OF NANOSHEET DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096883). METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096979). SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096986). METHOD FOR FORMING SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097005). AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097009). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097033). FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128376). METHOD AND STRUCTURE FOR AIR GAP INNER SPACER IN GATE-ALL-AROUND DEVICES simplified abstract
- Taiwan Semiconductor manufacturing Co., Ltd. patent applications on April 18th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240105795). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105814). INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113113). Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136401). PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136427). SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136441). SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
- TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. patent applications on February 8th, 2024
U
- US Patent Application 17827356. HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES simplified abstract
- US Patent Application 18094452. SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18117262. SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18227744. GATE STRUCTURES FOR SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18228134. COMPOSITE OXIDE SEMICONDUCTOR AND TRANSISTOR simplified abstract
- US Patent Application 18231546. DISPLAY APPARATUS simplified abstract
- US Patent Application 18232191. Gate Spacers In Semiconductor Devices simplified abstract
- US Patent Application 18347480. GATE STRUCTURE AND METHOD simplified abstract
- US Patent Application 18349448. INTEGRATED CIRCUIT WITH SIDEWALL SPACERS FOR GATE STACKS simplified abstract
- US Patent Application 18359280. Semiconductor Device With Fish Bone Structure And Methods Of Forming The Same simplified abstract
- US Patent Application 18361758. GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGATIVE TRANSCONDUCTANCE simplified abstract
- US Patent Application 18363881. FUSI GATED DEVICE FORMATION simplified abstract
- US Patent Application 18363945. Semiconductor Device and Method of Manufacture simplified abstract
- US Patent Application 18366871. GATE STRUCTURE AND METHOD OF FORMING SAME simplified abstract
- US Patent Application 18446190. Semiconductor Device with Air-Spacer simplified abstract
- US Patent Application 18446567. NOVEL STRUCTURE FOR METAL GATE ELECTRODE AND METHOD OF FABRICATION simplified abstract
- US Patent Application 18446664. ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract
- US Patent Application 18446674. TRANSISTOR ISOLATION STRUCTURES simplified abstract
- US Patent Application 18446733. Spacer Structures for Nano-Sheet-Based Devices simplified abstract
- US Patent Application 18446771. INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME simplified abstract
- US Patent Application 18446958. METHODS OF FORMING GATE STRUCTURES WITH UNIFORM GATE LENGTH simplified abstract
- US Patent Application 18447153. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18447239. HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER simplified abstract
- US Patent Application 18447467. CIRCUIT DEVICES WITH GATE SEALS simplified abstract
- US Patent Application 18447685. PARTIAL METAL GRAIN SIZE CONTROL TO IMPROVE CMP LOADING EFFECT simplified abstract