US Patent Application 18447239. HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER simplified abstract

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HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Huiching Chang of Hsinchu (TW)]]

[[Category:I-Ming Chang of Hsinchu (TW)]]

[[Category:Huang-Lin Chao of Hillsboro OR (US)]]

HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447239 titled 'HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER

Simplified Explanation

The patent application describes a method of forming a semiconductor device, specifically a transistor, on a semiconductor substrate.

  • The method involves several steps including forming a first dielectric layer on the substrate, followed by a dipole layer, a second dielectric layer, a conductive work function layer, and finally a gate electrode layer.
  • The distance between the dipole inducing elements in the dipole layer and the surface of the substrate can be adjusted by tuning the thickness of the first dielectric layer.
  • This adjustment of the distance allows for the adjustment of the threshold voltage of the transistor.
  • By varying the threshold voltage, the performance and characteristics of the transistor can be optimized for specific applications.


Original Abstract Submitted

A method of forming a semiconductor device includes forming a transistor comprising a gate stack on a semiconductor substrate by, at least, forming a first dielectric layer on the semiconductor substrate, forming a dipole layer on the dielectric layer; forming a second dielectric layer on the dipole layer, forming a conductive work function layer on the second dielectric layer, forming a gate electrode layer on the conductive work function layer. The method also includes varying a distance between dipole inducing elements in the dipole layer and a surface of the semiconductor substrate by tuning a thickness of the first dielectric layer to adjust a threshold voltage of the transistor.

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