17637479. THIN FILM TRANSISTOR, DISPLAY PANEL AND DISPLAY DEVICE simplified abstract (BOE Technology Group Co., Ltd.)
Contents
- 1 THIN FILM TRANSISTOR, DISPLAY PANEL AND DISPLAY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THIN FILM TRANSISTOR, DISPLAY PANEL AND DISPLAY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
THIN FILM TRANSISTOR, DISPLAY PANEL AND DISPLAY DEVICE
Organization Name
BOE Technology Group Co., Ltd.
Inventor(s)
THIN FILM TRANSISTOR, DISPLAY PANEL AND DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17637479 titled 'THIN FILM TRANSISTOR, DISPLAY PANEL AND DISPLAY DEVICE
Simplified Explanation
The present disclosure provides a thin film transistor, a display panel, and a display device. The thin film transistor includes a semiconductor material layer, a first insulating layer, and a gate layer. The semiconductor material layer is at a side of a base substrate and includes a first channel portion, a first doped portion, and a second channel portion sequentially connected. The first insulating layer is at a side of the semiconductor material layer facing away from the base substrate. The gate layer is at a side of the first insulating layer facing away from the semiconductor material layer and includes a first gate portion and a second gate portion. An orthographic projection of the first gate portion on the base substrate coincides with an orthographic projection of the first channel portion on the base substrate, and the first gate portion is configured to receive a gate driving signal.
- The thin film transistor includes a semiconductor material layer, a first insulating layer, and a gate layer.
- The semiconductor material layer consists of a first channel portion, a first doped portion, and a second channel portion.
- The gate layer includes a first gate portion and a second gate portion.
- The first gate portion is designed to receive a gate driving signal.
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Display panels for electronic devices
- Thin film transistors for improved display performance
Problems Solved
This technology helps address the following issues:
- Enhancing the efficiency and performance of display panels
- Improving the functionality of thin film transistors in display devices
Benefits
The benefits of this technology include:
- Higher quality display output
- Increased reliability and durability of display panels
- Enhanced overall performance of display devices
Potential Commercial Applications
Optimizing this technology for commercial use could lead to applications in:
- Consumer electronics industry
- Display manufacturing companies
Possible Prior Art
One possible prior art related to this technology is the development of thin film transistors for display panels in the electronics industry.
Unanswered Questions
How does this technology compare to existing thin film transistor designs in terms of performance and efficiency?
This article does not provide a direct comparison with existing thin film transistor designs to evaluate performance and efficiency.
What specific electronic devices or products could benefit the most from implementing this technology?
The article does not specify which electronic devices or products could benefit the most from the implementation of this technology.
Original Abstract Submitted
The present disclosure provides a thin film transistor, a display panel and a display device. The thin film transistor includes a semiconductor material layer, a first insulating layer and a gate layer. The semiconductor material layer is at a side of a base substrate, and includes a first channel portion, a first doped portion and a second channel portion sequentially connected. The first insulating layer is at a side of the semiconductor material layer facing away from the base substrate. The gate layer is at a side of the first insulating layer facing away from the semiconductor material layer, and includes a first gate portion and a second gate portion. An orthographic projection of the first gate portion on the base substrate coincides with an orthographic projection of the first channel portion on the base substrate, and the first gate portion is configured to receive a gate driving signal.
