US Patent Application 18446958. METHODS OF FORMING GATE STRUCTURES WITH UNIFORM GATE LENGTH simplified abstract

METHODS OF FORMING GATE STRUCTURES WITH UNIFORM GATE LENGTH

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Shahaji B. More of Hsinchu (TW)

Cheng-Han Lee of New Taipei (TW)

Shih-Chieh Chang of Taipei (TW)

METHODS OF FORMING GATE STRUCTURES WITH UNIFORM GATE LENGTH - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446958 titled 'METHODS OF FORMING GATE STRUCTURES WITH UNIFORM GATE LENGTH

Simplified Explanation

The patent application describes a device with two gate regions and spacers on their sidewalls.

• The first gate region has a certain length, and a spacer is placed on its sidewall.
• A semiconductor layer is placed over the first gate region.
• The second gate region is placed over the semiconductor layer, with the same length as the first gate region.
• A wider spacer is placed on the sidewall of the second gate region.

Original Abstract Submitted

A device includes a first gate region having a first gate length; a first spacer on a sidewall of the first gate region; a semiconductor layer over the first gate region; a second gate region over the semiconductor layer, wherein the second gate region has a second gate length equal to the first gate length; and a second spacer on a sidewall of second gate region, wherein the second spacer is wider than the first spacer.