18526429. METHOD FOR FORMING SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 METHOD FOR FORMING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR FORMING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD FOR FORMING SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chung-Ting Li of Hsinchu County (TW)
Jen-Hsiang Lu of Taipei City (TW)
Chih-Hao Chang of Hsinchu County (TW)
METHOD FOR FORMING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18526429 titled 'METHOD FOR FORMING SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the abstract involves forming gate spacers and an interlayer dielectric layer in a semiconductor device manufacturing process. The gate spacers are positioned on the sidewall of a gate structure, with the interlayer dielectric layer surrounding them. Portions of the gate spacers and the interlayer dielectric layer are removed to create a specific top surface profile.
- Gate spacers and interlayer dielectric layer are formed in a semiconductor device manufacturing process.
- Gate spacers are positioned on the sidewall of a gate structure, with the interlayer dielectric layer surrounding them.
- Portions of the gate spacers and the interlayer dielectric layer are removed simultaneously.
- The top surface of the gate spacers is lower than the top surface of the interlayer dielectric layer.
Potential Applications
This technology can be applied in the manufacturing of advanced semiconductor devices, such as microprocessors, memory chips, and other integrated circuits.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the structure of gate spacers and interlayer dielectric layers.
Benefits
The optimized structure of gate spacers and interlayer dielectric layers can lead to enhanced device performance, reduced power consumption, and increased reliability.
Potential Commercial Applications
The technology can be utilized by semiconductor manufacturers to produce high-performance and energy-efficient devices for various applications in electronics, telecommunications, and computing.
Possible Prior Art
Previous methods for forming gate spacers and interlayer dielectric layers in semiconductor devices may not have included the simultaneous removal of portions of these components to achieve a specific top surface profile.
Unanswered Questions
How does this technology impact the overall cost of semiconductor device manufacturing?
The abstract does not provide information on the cost implications of implementing this technology in semiconductor device manufacturing processes.
Are there any limitations or challenges associated with the simultaneous removal of portions of gate spacers and interlayer dielectric layers?
The abstract does not address any potential limitations or challenges that may arise when implementing this method in semiconductor device manufacturing.
Original Abstract Submitted
A method includes forming a first gate spacer and a second gate spacer on a sidewall of a first gate structure. The first gate spacer is between the second gate spacer and the first gate structure. A first interlayer dielectric (ILD) layer is formed to surround the first gate spacer, the second gate spacer, and the first gate structure. A portion of the second gate spacer and a portion of the first ILD layer are removed simultaneously. A top surface of the second gate spacer is lower than a top surface of the first ILD layer.
