17849154. DEVICE WITH MODIFIED WORK FUNCTION LAYER AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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DEVICE WITH MODIFIED WORK FUNCTION LAYER AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yu-Chi Pan of Zhubei City (TW)

Kuan-Wei Lin of Tainan City (TW)

Chun-Neng Lin of Hsin-chu (TW)

Yu-Shih Wang of Tainan City (TW)

Ming-Hsi Yeh of Hsinchu (TW)

Kuo-Bin Huang of Jhubei City (TW)

DEVICE WITH MODIFIED WORK FUNCTION LAYER AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17849154 titled 'DEVICE WITH MODIFIED WORK FUNCTION LAYER AND METHOD OF FORMING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes multiple fin structures on a substrate and a work function alloy layer on each fin structure.

  • The fin structures are made up of a first fin structure and a second fin structure.
  • The work function alloy layer has different compositions of a first element in different portions.
  • The first portion of the work function alloy layer, which is on the first fin structure, has a different content of the first element compared to the second portion on the second fin structure.

Potential Applications:

  • This technology can be used in the manufacturing of semiconductor devices such as transistors.
  • It can improve the performance and efficiency of these devices by controlling the work function of the fin structures.

Problems Solved:

  • The technology addresses the challenge of controlling the work function of fin structures in semiconductor devices.
  • It allows for precise tuning of the work function by adjusting the composition of the work function alloy layer.

Benefits:

  • The technology enables better control over the electrical properties of semiconductor devices.
  • It can lead to improved device performance, power efficiency, and reliability.
  • The ability to adjust the work function can enhance the functionality and versatility of semiconductor devices.


Original Abstract Submitted

A semiconductor device includes a plurality of fin structures disposed over a substrate and a work function alloy layer disposed over each fin structure of the plurality of fin structures. The plurality of fin structures includes a first fin structure and a second fin structure. A content of a first element in a first portion of the work function alloy layer, which portion is disposed over the first fin structure, is different from a content of the first element in a second portion of the work function alloy layer, which portion is disposed over the second fin structure.

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