Taiwan semiconductor manufacturing co., ltd. (20240097005). AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP simplified abstract
Contents
- 1 AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Shih-Hang Chiu of Taichung (TW)
AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097005 titled 'AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP
Simplified Explanation
The semiconductor device and fabrication method described in the patent application involve a gate structure with various layers and a continuous metal cap formed over the gate structure.
- Gate structure includes:
- High-k dielectric layer - P-type work function layer - N-type work function layer - Dielectric anti-reaction layer - Glue layer
- Continuous metal cap formed by:
- Depositing metal material over the gate structure - Selectively removing a portion of the anti-reaction layer - Depositing additional metal material over the gate structure
- Fabrication method steps:
- Flattening the top layer of the gate structure - Precleaning and pretreating the surface of the gate structure - Depositing metal material to form a discontinuous metal cap - Selectively removing a portion of the anti-reaction layer - Depositing additional metal material to create a continuous metal cap - Containing growth of the metal cap
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for the fabrication of advanced semiconductor devices with improved performance and reliability.
Problems Solved
This technology addresses the challenge of enhancing the gate structure of semiconductor devices to optimize their functionality and efficiency.
Benefits
The benefits of this technology include improved gate structure design, increased device performance, enhanced reliability, and potentially reduced manufacturing costs.
Potential Commercial Applications
- Optimizing semiconductor device performance
- Enhancing reliability of semiconductor devices
Possible Prior Art
There may be prior art related to the fabrication of semiconductor devices with metal caps, but specific examples are not provided in the patent application.
Unanswered Questions
How does this technology compare to existing methods for enhancing semiconductor device performance?
The patent application does not provide a direct comparison to existing methods, so it is unclear how this technology differs or improves upon current practices.
What specific improvements in device performance can be attributed to the continuous metal cap described in the patent application?
The patent application mentions improved performance, but it does not detail the specific enhancements or metrics that can be attributed to the continuous metal cap.
Original Abstract Submitted
disclosed is a semiconductor device and semiconductor fabrication method. a semiconductor device includes: a gate structure over a semiconductor substrate, having a high-k dielectric layer, a p-type work function layer, an n-type work function layer, a dielectric anti-reaction layer, and a glue layer; and a continuous metal cap over the gate structure formed by metal material being deposited over the gate structure, a portion of the anti-reaction layer being selectively removed, and additional metal material being deposited over the gate structure. a semiconductor fabrication method includes: receiving a gate structure; flattening the top layer of the gate structure; precleaning and pretreating the surface of the gate structure; depositing metal material over the gate structure to form a discontinuous metal cap; selectively removing a portion of the anti-reaction layer; depositing additional metal material over the gate structure to create a continuous metal cap; and containing growth of the metal cap.
