US Patent Application 18446733. Spacer Structures for Nano-Sheet-Based Devices simplified abstract

Spacer Structures for Nano-Sheet-Based Devices

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Shih-Cheng Chen of New Taipei City (TW)]]

[[Category:Kuo-Cheng Chiang of Hsinchu County (TW)]]

[[Category:Zhi-Chang Lin of Hsinchu County (TW)]]

Spacer Structures for Nano-Sheet-Based Devices - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446733 titled 'Spacer Structures for Nano-Sheet-Based Devices

Simplified Explanation

The patent application describes a semiconductor device with specific features and components. Here is a simplified explanation of the abstract:

• The semiconductor device consists of a substrate, two source/drain features, two semiconductor layers, and a gate.
• The gate is positioned between the source/drain features, with a portion of it also between the semiconductor layers.
• The device includes two inner spacers, one between the semiconductor layers and another between the first inner spacer and a portion of the first source/drain feature.
• The first source/drain feature is located between the two semiconductor layers.
• The first inner spacer has a U-shaped profile.
• Additionally, there is a second inner spacer between the first inner spacer and the portion of the first source/drain feature.

Bullet points explaining the patent/innovation:

• The patent application describes a specific configuration of a semiconductor device.
• The device includes a gate positioned between source/drain features and semiconductor layers.
• Inner spacers are used to separate and control the components within the device.
• The first inner spacer has a U-shaped profile, which may provide specific advantages or benefits.
• The second inner spacer is positioned between the first inner spacer and a portion of the first source/drain feature.
• The described configuration may offer improved performance or functionality compared to existing semiconductor devices.

Original Abstract Submitted

A semiconductor device includes a substrate, a first source/drain feature and a second source/drain feature over the substrate, a first semiconductor layer and a second semiconductor layer between the first and the second source/drain features, and a gate between the first and the second source/drain features. A portion of the gate is further between the first and the second semiconductor layers. Moreover, the semiconductor device includes a first inner spacer and a second inner spacer. The first inner spacer is between the first and the second semiconductor layers and further between the portion of the gate and a portion of the first source/drain feature. Furthermore, the portion of the first source/drain feature is between the first semiconductor layer and the second semiconductor layer. The first inner spacer has a U-shaped profile. Additionally, the second inner spacer is between the first inner spacer and the portion of the first source drain feature.