US Patent Application 18363945. Semiconductor Device and Method of Manufacture simplified abstract

Semiconductor Device and Method of Manufacture

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chia-Ching Lee of New Taipei (TW)

Hsin-Han Tsai of Hsinchu (TW)

Shih-Hang Chiu of Taichung (TW)

Tsung-Ta Tang of Hsinchu (TW)

Chung-Chiang Wu of Taichung (TW)

Hung-Chin Chung of Pingzhen (TW)

Hsien-Ming Lee of Changhua (TW)

Da-Yuan Lee of Jhubei (TW)

Jian-Hao Chen of Hsinchu (TW)

Chien-Hao Chen of Chuangwei Township (TW)

Kuo-Feng Yu of Zhudong Township (TW)

Chia-Wei Chen of Hsinchu (TW)

Chih-Yu Hsu of Xinfeng Township (TW)

Semiconductor Device and Method of Manufacture - A simplified explanation of the abstract

This abstract first appeared for US patent application 18363945 titled 'Semiconductor Device and Method of Manufacture

Simplified Explanation

The patent application describes a method for forming a gate structure in a semiconductor device.

• A recess is created between adjacent gate spacers by removing a dummy gate electrode and a dummy gate dielectric.
• A gate dielectric is then deposited in the recess.
• A barrier layer is deposited over the gate dielectric.
• A first work function layer is deposited over the barrier layer.
• A first anti-reaction layer is formed over the first work function layer to reduce oxidation of the first work function layer.
• A fill material is deposited over the first anti-reaction layer.

Original Abstract Submitted

A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.