17741270. SEMICONDUCTOR DEVICES WITH METAL INTERCALATED HIGH-K CAPPING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
SEMICONDUCTOR DEVICES WITH METAL INTERCALATED HIGH-K CAPPING
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chandrashekhar Prakash Savant of Hsinchu (TW)
Kin Shun Chong of Hsinchu City (TW)
Chia-Ming Tsai of Hsinchu County (TW)
SEMICONDUCTOR DEVICES WITH METAL INTERCALATED HIGH-K CAPPING - A simplified explanation of the abstract
This abstract first appeared for US patent application 17741270 titled 'SEMICONDUCTOR DEVICES WITH METAL INTERCALATED HIGH-K CAPPING
Simplified Explanation
The patent application describes a method for fabricating a structure with a high-k gate dielectric layer using germanium as the semiconductor material. The method involves treating the structure with a metal-containing gas, depositing a silicon layer, and annealing the structure to form a metal intermixing layer.
- The method involves providing a structure with a substrate, a semiconductor channel layer (germanium), an interfacial oxide layer, and a high-k gate dielectric layer.
- A metal nitride layer is formed over the high-k gate dielectric layer, followed by a treatment using a metal-containing gas.
- A silicon layer is deposited over the metal nitride layer, and the structure is annealed to form a metal intermixing layer.
- The metal intermixing layer contains metal species from the high-k gate dielectric layer and additional metal species from the metal-containing gas.
Potential applications of this technology:
- This method can be used in the fabrication of high-performance transistors and integrated circuits.
- It can improve the performance and efficiency of electronic devices that use germanium as the semiconductor material.
Problems solved by this technology:
- The method addresses the challenge of integrating high-k gate dielectric layers with germanium-based semiconductor materials.
- It enables the formation of a metal intermixing layer that enhances the performance of the device.
Benefits of this technology:
- The method allows for the use of germanium as a semiconductor material, which has superior electrical properties compared to traditional silicon.
- It provides a solution for improving the performance and efficiency of electronic devices by integrating high-k gate dielectric layers.
Original Abstract Submitted
A method includes providing a structure having a substrate, a semiconductor channel layer over the substrate, an interfacial oxide layer over the semiconductor channel layer, and a high-k gate dielectric layer over the interfacial oxide layer, wherein the semiconductor channel layer includes germanium. The method further includes forming a metal nitride layer over the high-k gate dielectric layer and performing a first treatment to the structure using a metal-containing gas. After the performing of the first treatment, the method further includes depositing a silicon layer over the metal nitride layer; and then annealing the structure such that a metal intermixing layer is formed over the high-k gate dielectric layer. The metal intermixing layer includes a metal oxide having metal species from the high-k gate dielectric layer and additional metal species from the metal-containing gas.
