18153571. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Li-Wei Yin of Hsinchu (TW)

Tzu-Wen Pan of Hsinchu (TW)

Yu-Hsien Lin of Kaohusiung (TW)

Yu-Shih Wang of Tainan (TW)

Jih-Sheng Yang of Hsinchu (TW)

Shih-Chieh Chao of Taichung (TW)

Yih-Ann Lin of Hsinchu (TW)

Ryan Chia-Jen Chen of Hsinchu (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18153571 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The semiconductor fabrication method described in the abstract involves forming a gate stack in the place of a dummy gate structure, adding metal cap layers and dielectric cap layers, selectively removing portions of the layers, and flattening the top layers using planarization operations.

• Formation of gate stack in place of dummy gate structure
• Addition of metal cap layers and dielectric cap layers
• Selective removal of portions of layers while leaving sidewall portions
• Flattening of top layers using planarization operations

Potential Applications

The technology described in this patent application could be applied in the semiconductor industry for the fabrication of advanced integrated circuits, specifically in the production of high-performance transistors.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the gate structure, reducing parasitic capacitance, and optimizing the overall functionality of the integrated circuits.

Benefits

The benefits of this technology include improved transistor performance, increased device reliability, enhanced circuit speed, and reduced power consumption in semiconductor devices.

Potential Commercial Applications

One potential commercial application of this technology could be in the manufacturing of advanced processors for computers, smartphones, and other electronic devices, where high-speed and energy-efficient transistors are essential.

Possible Prior Art

One possible prior art for this technology could be the use of similar methods for gate stack formation and optimization in semiconductor fabrication processes.

How does this technology compare to existing methods in terms of cost-effectiveness?

This article does not provide information on the cost-effectiveness of implementing this technology compared to existing methods.

What are the environmental implications of using this technology in semiconductor manufacturing?

The article does not address the environmental impact of utilizing this technology in semiconductor fabrication processes.

Original Abstract Submitted

Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.