US Patent Application 18446190. Semiconductor Device with Air-Spacer simplified abstract

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Semiconductor Device with Air-Spacer

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Wei-Yang Lee of Taipei City (TW)

Feng-Cheng Yang of Hsinchu County (TW)

Chung-Te Lin of Tainan City (TW)

Yen-Ming Chen of Hsin-Chu County (TW)

Semiconductor Device with Air-Spacer - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446190 titled 'Semiconductor Device with Air-Spacer

Simplified Explanation

The patent application describes a semiconductor device with specific features and materials used in its construction. Here is a simplified explanation of the abstract:

  • The semiconductor device consists of a substrate, two source/drain regions, and a gate stack.
  • A spacer layer covers the sidewalls of the gate stack, and an S/D contact metal is placed over one of the source/drain regions.
  • A first dielectric layer covers the sidewalls of the S/D contact metal, and an inter-layer dielectric (ILD) layer covers the first dielectric layer, spacer layer, and gate stack.
  • The ILD layer creates a gap, and the material of one sidewall of the gap is different from the materials of the top and bottom surfaces of the gap.
  • Similarly, the material of the other sidewall of the gap is also different from the materials of the top and bottom surfaces of the gap.

Bullet points to explain the patent/innovation:

  • The semiconductor device includes specific components such as a substrate, source/drain regions, gate stack, spacer layer, S/D contact metal, and dielectric layers.
  • The use of different materials in the sidewalls of the gap helps optimize the performance and functionality of the device.
  • This innovation may improve the electrical properties, thermal characteristics, or other aspects of the semiconductor device.
  • The specific materials used in the sidewalls of the gap may be chosen based on their unique properties and compatibility with the overall device structure.
  • The patent application aims to protect the novel design and construction of the semiconductor device, which may have potential applications in various electronic devices and systems.


Original Abstract Submitted

A semiconductor device includes a substrate; two source/drain (S/D) regions over the substrate; a gate stack over the substrate and between the two S/D regions; a spacer layer covering sidewalls of the gate stack; an S/D contact metal over one of the two S/D regions; a first dielectric layer covering sidewalls of the S/D contact metal; and an inter-layer dielectric (ILD) layer covering the first dielectric layer, the spacer layer, and the gate stack, thereby defining a gap. A material of a first sidewall of the gap is different from materials of a top surface and a bottom surface of the gap, and a material of a second sidewall of the gap is different from the materials of the top surface and the bottom surface of the gap.

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