US Patent Application 18231546. DISPLAY APPARATUS simplified abstract

DISPLAY APPARATUS

Organization Name

LG DISPLAY CO., LTD.

Inventor(s)

Seong-Pil Cho of Goyang-si (KR)

Dong-Yup Kim of Gimpo-si (KR)

Kyung-Mo Son of Paju-si (KR)

Sang-Soon Noh of Goyang-si (KR)

Jun-Seuk Lee of Seoul (KR)

Yong-Bin Kang of Gumi-si (KR)

Kye-Chul Choi of Seoul (KR)

Sung-Ho Moon of Gumi-si (KR)

Sang-Gul Lee of Seoul (KR)

Byeong-Keun Kim of Gimpo-si (KR)

Kyoung-Soo Lee of Paju-si (KR)

Hyun-Gyo Jeong of Daegu (KR)

Jin-Kyu Roh of Gimcheon-si (KR)

Jung-Doo Jin of Gumi-si (KR)

Ki-Hyun Kwon of Gumi-si (KR)

Hee-Jin Jung of Busan (KR)

Jang-Dae Kim of Daegu (KR)

Won-Ho Son of Busan (KR)

Chan-Ho Kim of Paju-si (KR)

DISPLAY APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18231546 titled 'DISPLAY APPARATUS

Simplified Explanation

The patent application describes a display apparatus that includes two types of thin-film transistors and a light emitting element.

• The first thin-film transistor has a polysilicon material and includes a gate electrode, two electrodes, and an active layer.
• The second thin-film transistor has an oxide semiconductor and includes a gate electrode, two electrodes, and an active layer.
• The first emitting electrode of the light emitting element is connected to one of the electrodes of the first thin-film transistor.
• The first active layer of the first thin-film transistor is electrically connected to one end of the second active layer of the second thin-film transistor.

Original Abstract Submitted

A display apparatus can include a first thin-film transistor including a first active layer having a first polysilicon material, a first gate electrode overlapping the first active layer, a first electrode and a second electrode; a second thin-film transistor including a second active layer having an oxide semiconductor, a second gate electrode overlapping the second active layer, a third electrode and a fourth electrode; and a first emitting electrode of a light emitting element electrically connected to the second electrode of the first thin-film transistor. Also, one end of the first active layer having the first polysilicon material is electrically connected to one or the other end of the second active layer having the oxide semiconductor.