Taiwan semiconductor manufacturing co., ltd. (20240096630). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Li-Wei Yin of Hsinchu (TW)

Tzu-Wen Pan of Hsinchu (TW)

Yu-Hsien Lin of Kaohusiung (TW)

Yu-Shih Wang of Tainan (TW)

Jih-Sheng Yang of Hsinchu (TW)

Shih-Chieh Chao of Taichung (TW)

Yih-Ann Lin of Hsinchu (TW)

Ryan Chia-Jen Chen of Hsinchu (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096630 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The semiconductor fabrication method described in the abstract involves forming a gate stack in place of a dummy gate structure, adding metal cap layers and dielectric cap layers, selectively removing portions of the gate stack and metal cap layers, and flattening the layers using planarization operations.

• Formation of gate stack in place of dummy gate structure
• Addition of metal cap layers and dielectric cap layers
• Selective removal of portions of gate stack and metal cap layers
• Flattening of layers using planarization operations

Potential Applications

This technology can be applied in the manufacturing of advanced semiconductor devices, such as microprocessors, memory chips, and integrated circuits.

Problems Solved

This method helps in improving the performance and reliability of semiconductor devices by enhancing the gate structure and reducing parasitic effects.

Benefits

The benefits of this technology include increased device speed, reduced power consumption, improved thermal stability, and overall enhanced device performance.

Potential Commercial Applications

Potential commercial applications of this technology include the production of high-performance electronic devices for various industries, such as telecommunications, computing, automotive, and consumer electronics.

Possible Prior Art

One possible prior art related to this technology could be the use of metal cap layers in semiconductor fabrication processes to improve device performance and reliability.

How does this method compare to traditional semiconductor fabrication techniques?

This article does not provide a direct comparison between this method and traditional semiconductor fabrication techniques.

What are the specific materials used in the metal cap layers and dielectric cap layers in this method?

The article does not specify the exact materials used in the metal cap layers and dielectric cap layers.

Original Abstract Submitted

disclosed is a semiconductor fabrication method. the method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.