18153597. AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Shih-Hang Chiu of Taichung (TW)
AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP - A simplified explanation of the abstract
This abstract first appeared for US patent application 18153597 titled 'AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP
Simplified Explanation
The semiconductor device and fabrication method described in the patent application involve the creation of a continuous metal cap over a gate structure in a semiconductor device, improving its performance and reliability.
- Gate structure with high-k dielectric layer, p-type work function layer, n-type work function layer, dielectric anti-reaction layer, and glue layer
- Continuous metal cap formed by depositing metal material over the gate structure, selectively removing a portion of the anti-reaction layer, and depositing additional metal material
- Fabrication method includes flattening the gate structure, pre-cleaning and pre-treating its surface, depositing metal material to form a discontinuous metal cap, selectively removing a portion of the anti-reaction layer, and depositing additional metal material to create a continuous metal cap
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the fabrication of advanced semiconductor devices with improved performance and reliability.
Problems Solved
This technology addresses the challenge of enhancing the gate structure in semiconductor devices to achieve better functionality and durability.
Benefits
The benefits of this technology include improved performance, reliability, and longevity of semiconductor devices, leading to enhanced overall efficiency in electronic systems.
Potential Commercial Applications
The technology described in this patent application has potential commercial applications in the semiconductor manufacturing industry for producing high-quality semiconductor devices with advanced features.
Possible Prior Art
One possible prior art for this technology could be the use of metal caps in semiconductor devices to improve their performance and reliability. However, the specific method described in this patent application may offer unique advantages over existing techniques.
Unanswered Questions
How does this technology compare to other methods for enhancing gate structures in semiconductor devices?
This article does not provide a direct comparison with other methods for improving gate structures in semiconductor devices. It would be helpful to understand the specific advantages and disadvantages of this technology compared to existing techniques.
What are the potential limitations or drawbacks of implementing this technology in semiconductor fabrication processes?
The article does not address any potential limitations or drawbacks of implementing this technology in semiconductor fabrication processes. It would be important to consider any challenges or constraints that may arise when applying this method in practical manufacturing settings.
Original Abstract Submitted
Disclosed is a semiconductor device and semiconductor fabrication method. A semiconductor device includes: a gate structure over a semiconductor substrate, having a high-k dielectric layer, a p-type work function layer, an n-type work function layer, a dielectric anti-reaction layer, and a glue layer; and a continuous metal cap over the gate structure formed by metal material being deposited over the gate structure, a portion of the anti-reaction layer being selectively removed, and additional metal material being deposited over the gate structure. A semiconductor fabrication method includes: receiving a gate structure; flattening the top layer of the gate structure; precleaning and pretreating the surface of the gate structure; depositing metal material over the gate structure to form a discontinuous metal cap; selectively removing a portion of the anti-reaction layer; depositing additional metal material over the gate structure to create a continuous metal cap; and containing growth of the metal cap.
