US Patent Application 18228134. COMPOSITE OXIDE SEMICONDUCTOR AND TRANSISTOR simplified abstract

COMPOSITE OXIDE SEMICONDUCTOR AND TRANSISTOR

Organization Name

Semiconductor Energy Laboratory Co., Ltd.

Inventor(s)

Shunpei Yamazaki of Setagaya (JP)

Yasuharu Hosaka of Tochigi (JP)

Yukinori Shima of Tatebayashi (JP)

Junichi Koezuka of Tochigi (JP)

Kenichi Okazaki of Tochigi (JP)

COMPOSITE OXIDE SEMICONDUCTOR AND TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18228134 titled 'COMPOSITE OXIDE SEMICONDUCTOR AND TRANSISTOR

Simplified Explanation

The abstract describes a novel composite oxide semiconductor material that consists of three regions arranged in a mosaic pattern.

• The first region contains indium, while the second region contains an element M (such as Ga, Al, Hf, Y, or Sn).
• The third region contains zinc oxide.
• The first region can be either indium oxide or indium zinc oxide, while the second region can be either gallium oxide or gallium zinc oxide.
• The element M in the second region is specifically gallium.
• The composite oxide semiconductor material has potential applications in various fields, including electronics and optoelectronics.

Original Abstract Submitted

A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.