18338869. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Keunwook Shin of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18338869 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with a source area and a drain area separated by a trench. It also includes a gate insulating layer in the trench and a gate electrode. The gate electrode has a lower buried portion and an upper buried portion in the trench. The lower buried portion consists of a first conductive layer, while the upper buried portion consists of a two-dimensional (2D) material layer and a second conductive layer. The second conductive layer contains a transition metal, which is also present in the first conductive layer. The 2D material layer consists of a chalcogen compound of a transition metal, identical to the transition metal in the second conductive layer.
- The semiconductor device includes a gate electrode with a lower buried portion and an upper buried portion in a trench.
- The lower buried portion is made of a first conductive layer, while the upper buried portion consists of a 2D material layer and a second conductive layer.
- The second conductive layer contains a transition metal, which is also present in the first conductive layer.
- The 2D material layer is composed of a chalcogen compound of a transition metal, identical to the transition metal in the second conductive layer.
Potential Applications:
- This semiconductor device can be used in various electronic devices, such as transistors, integrated circuits, and microprocessors.
- It can be applied in the field of telecommunications, where high-speed and high-performance devices are required.
- The device can also find applications in the automotive industry for advanced driver assistance systems (ADAS) and autonomous vehicles.
Problems Solved:
- The device addresses the need for improved performance and efficiency in semiconductor devices.
- It solves the challenge of integrating different conductive layers and materials in a gate electrode structure.
- The use of a 2D material layer provides enhanced electrical properties and stability.
Benefits:
- The semiconductor device offers improved conductivity and performance due to the use of a 2D material layer and a transition metal in the gate electrode.
- It allows for better control of the flow of current, resulting in increased efficiency and reduced power consumption.
- The device enables the development of smaller and more compact electronic devices, leading to advancements in miniaturization and portability.
Original Abstract Submitted
A semiconductor device may include a substrate including a source area and a drain area separated by a trench; a gate insulating layer in the trench; and a gate electrode. The gate electrode may include a lower buried portion and an upper buried portion in the trench. The lower buried portion may include a first conductive layer, and the upper buried portion may include a two-dimensional (2D) material layer and a second conductive layer. The second conductive layer may include a transition metal. The first conductive layer may include a transition metal identical to the transition metal included in the second conductive layer. The 2D material layer may include a chalcogen compound of a transition metal which is identical to the transition metal in the second conductive layer.
