Category:H01L29/775
H01L29/775 – IPC Classification Breakdown
H01L29/775 is a specific classification code under the International Patent Classification (IPC) system, which categorizes patents and patent applications according to the different areas of technology they pertain to. This classification falls under the broader category of H01L which relates to semiconductor devices; electric solid state devices not otherwise provided for. Here is a detailed breakdown of the code H01L29/775:
- H01L: This symbolizes the section of the classification dedicated to semiconductor devices; electric solid state devices not otherwise provided for.
- H01L29: This is a subgroup within H01L, focusing specifically on semiconductor devices in general.
- H01L29/77: This further narrows down the category to semiconductor devices with channel region and gate electrodes.
- H01L29/775: This represents the most specific classification, indicating semiconductor devices with insulated gate field-effect transistors.
- H01L29/77: This further narrows down the category to semiconductor devices with channel region and gate electrodes.
- H01L29: This is a subgroup within H01L, focusing specifically on semiconductor devices in general.
Applications of H01L29/775
The H01L29/775 classification typically encompasses patents related to the structure, manufacturing processes, and applications of insulated gate field-effect transistors (IGFETs), including:
- Design innovations in gate dielectrics, channel engineering, and source/drain configurations.
- Developments in semiconductor materials and doping techniques for performance enhancement.
- Advanced fabrication methods to improve transistor reliability, scalability, and power efficiency.
Relevance in Modern Technology
Transistors classified under H01L29/775 are crucial in modern electronic devices, playing a pivotal role in the miniaturization and performance improvement of integrated circuits used in:
- Computers and smartphones
- High-speed networking and communication devices
- Automotive electronics and sensors
- Renewable energy systems and power management
Category Links
Pages in category "H01L29/775"
The following 155 pages are in this category, out of 357 total.
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- Intel corporation (20240105804). INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS BOUND BY GATE CUTS simplified abstract
- Intel corporation (20240105822). STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract
- Intel corporation (20240112916). METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract
- Intel corporation (20240113107). GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract
- Intel corporation (20240113116). EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract
- Intel corporation (20240113177). STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract
- Intel corporation (20240113212). TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on February 29th, 2024
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on March 28th, 2024
- International business machines corporation (20240096751). SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW simplified abstract
- International business machines corporation (20240096886). HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract
- International business machines corporation (20240096887). MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract
- International business machines corporation (20240096891). SELF-ALIGNED BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240096946). DUAL DIELECTRIC STRESSORS simplified abstract
- International business machines corporation (20240096947). COMPOSITE NANOSHEET TUNNEL TRANSISTORS simplified abstract
- International business machines corporation (20240096948). STRUCTURE HAVING ENHANCED GATE RESISTANCE simplified abstract
- International business machines corporation (20240096949). DIODES IN NANOSHEET TECHNOLOGY simplified abstract
- International business machines corporation (20240096978). COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240105606). BACKSIDE POWER RAIL WITH TIGHT SPACE simplified abstract
- International business machines corporation (20240105613). DIRECT BACKSIDE CONTACT WITH REPLACEMENT BACKSIDE DIELECTRIC simplified abstract
- International business machines corporation (20240105614). TRANSISTORS WITH ENHANCED VIA-TO-BACKSIDE POWER RAIL simplified abstract
- International business machines corporation (20240105768). EPI GROWTH UNIFORMITY WITH SOURCE/DRAIN PLACEHOLDER simplified abstract
- International business machines corporation (20240105769). STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH NANOSHEET LOGIC DEVICE simplified abstract
- International business machines corporation (20240112984). METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN simplified abstract
- International business machines corporation (20240112985). FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract
- International business machines corporation (20240112986). COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION simplified abstract
- International business machines corporation (20240113117). VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract
- International business machines corporation (20240113162). MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract
- International business machines corporation (20240113176). FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract
- International business machines corporation (20240113192). FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL simplified abstract
- International business machines corporation (20240113213). HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract
- International business machines corporation (20240120256). Backside BPR/BSPDN Intergration with Backside Local Interconnect. simplified abstract
- International business machines corporation (20240120372). SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION simplified abstract
- International business machines corporation (20240128318). SEMICONDUCTOR STRUCTURE WITH FULLY WRAPPED-AROUND BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240128333). DIRECT BACKSIDE SELF-ALIGNED CONTACT simplified abstract
- International business machines corporation (20240128334). SEMICONDUCTOR STRUCTURE WITH WRAPPED-AROUND BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240128346). GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS simplified abstract
- International business machines corporation (20240136287). Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits simplified abstract
- International business machines corporation (20240136414). SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract
- International Business Machines Corporation patent applications on April 11th, 2024
- International Business Machines Corporation patent applications on April 18th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on April 25th, 2024
- International Business Machines Corporation patent applications on April 4th, 2024
- International Business Machines Corporation patent applications on February 29th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on February 8th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 28th, 2024
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- Samsung electronics co., ltd. (20240096879). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096889). INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240096953). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096954). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240096955). INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR simplified abstract
- Samsung electronics co., ltd. (20240096960). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096980). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096984). INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240096991). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096995). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240105615). FIELD-EFFECT TRANSISTOR WITH UNIFORM SOURCE/DRAIN REGIONS ON SELF-ALIGNED DIRECT BACKSIDE CONTACT STRUCTURES OF BACKSIDE POWER DISTRIBUTION NETWORK (BSPDN) simplified abstract
- Samsung electronics co., ltd. (20240105717). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240105724). THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240105773). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240105776). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240105789). SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR simplified abstract
- Samsung electronics co., ltd. (20240113110). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240113163). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240120278). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240120279). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240120378). SEMICONDUCTOR DEVICE INCLUDING NANOSHEET TRANSISTOR simplified abstract
- Samsung electronics co., ltd. (20240120392). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240120393). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240120400). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240128159). INTEGRATED CIRCUIT INCLUDING STANDARD CELL WITH A METAL LAYER HAVING A PATTERN AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240128161). INTEGRATED CIRCUIT DEVICES simplified abstract
- Samsung electronics co., ltd. (20240128264). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240128319). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240128321). SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE simplified abstract
- Samsung electronics co., ltd. (20240128332). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240128335). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240136356). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240136398). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240136416). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240136425). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240136426). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240136430). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240138137). SEMICONDUCTOR DEVICE simplified abstract
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 14th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
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- Taiwan semiconductor manufacturing co., ltd. (20240096866). ACTIVE ZONES WITH OFFSET IN SEMICONDUCTOR CELL simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096885). SEMICONDUCTOR DEVICE AND FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096979). SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096994). MULTIPLE GATE PATTERNING METHODS TOWARDS FUTURE NANOSHEET SCALING simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096997). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097039). Crystallization of High-K Dielectric Layer simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128267). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128364). SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF simplified abstract
- Taiwan Semiconductor manufacturing Co., Ltd. patent applications on April 18th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240105722). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105725). CFET WITH ASYMMETRIC SOURCE/DRAIN FEATURES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105772). INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105786). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105787). SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105794). FIELD EFFECT TRANSISTOR WITH GATE ELECTRODE HAVING MULTIPLE GATE LENGTHS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105806). Multi-Gate Devices And Method Of Forming The Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113121). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113165). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113188). INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113195). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113198). METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113199). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113201). MULTI-GATE DEVICE INNER SPACER AND METHODS THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113214). SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240120337). SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240120377). TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240120381). SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240120391). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240120414). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136228). Ion Implantation For Nano-FET simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136427). SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 11th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
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- US Patent Application 17824249. SEMICONDUCTOR DEVICE STRUCTURE WITH SOURCE/DRAIN STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- US Patent Application 17825411. SEMICONDUCTOR DEVICE INCLUDING GRAPHENE BARRIER AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 17826604. SEMICONDUCTOR DEVICE STRUCTURE WITH AIR GAP AND METHOD FOR FORMING THE SAME simplified abstract
- US Patent Application 18094452. SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18106631. SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18117262. SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18150189. SEMICONDUCTOR CELL STRUCTURE, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 18155532. INTEGRATED CIRCUIT DEVICES simplified abstract
- US Patent Application 18189538. SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18366297. Nanowire Stack GAA Device with Inner Spacer and Methods for Producing the Same simplified abstract
- US Patent Application 18446664. ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract
- US Patent Application 18446918. SEMICONDUCTOR DEVICE AND METHOD simplified abstract