Samsung electronics co., ltd. (20240136430). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Wook Hyun Kwon of Suwon-si (KR)
Kyu Bong Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136430 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes two active patterns with different heights, gate structures, and source/drain patterns. The first active pattern has a larger lower pattern and a different number of sheet patterns compared to the second active pattern.
- The first active pattern consists of a first lower pattern and first sheet patterns.
- The second active pattern consists of a second lower pattern and second sheet patterns, with a smaller height than the first lower pattern.
- A first gate structure is located on the first lower pattern.
- A second gate structure is located on the second lower pattern.
- A first source/drain pattern is on the first lower pattern and connected to the first sheet patterns.
- A second source/drain pattern is on the second lower pattern and connected to the second sheet patterns.
- The width of the upper surface of the first lower pattern differs from the width of the upper surface of the second lower pattern.
- The number of first sheet patterns is different from the number of second sheet patterns.
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the development of advanced semiconductor devices with improved performance and efficiency.
Problems Solved
This technology addresses the challenge of optimizing the design and functionality of semiconductor devices by incorporating different active patterns with varying heights and configurations.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially reduced power consumption in semiconductor applications.
Potential Commercial Applications
The potential commercial applications of this technology in the semiconductor industry could include the production of high-performance integrated circuits, advanced electronic devices, and other semiconductor products.
Possible Prior Art
One possible prior art for this technology could be the development of semiconductor devices with multiple active patterns and gate structures, although the specific configuration described in this patent application may be unique.
Unanswered Questions
How does this technology compare to existing semiconductor device designs in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing semiconductor device designs in terms of performance and efficiency. Further research or testing may be needed to evaluate the advantages of this technology over current designs.
What potential challenges or limitations could arise in implementing this technology in practical semiconductor applications?
The article does not address potential challenges or limitations that could arise in implementing this technology in practical semiconductor applications. Additional studies or experiments may be required to identify and overcome any obstacles in the real-world application of this innovation.
Original Abstract Submitted
a semiconductor device includes a first active pattern including a first lower pattern and first sheet patterns; a second active pattern including a second lower pattern and second sheet patterns, a height of the second lower pattern being smaller than a height of the first lower pattern; a first gate structure on the first lower pattern; a second gate structure on the second lower pattern; a first source/drain pattern on the first lower pattern and connected to the first sheet patterns; and a second source/drain pattern on the second lower pattern and connected to the second sheet patterns, wherein a width of an upper surface of the first lower pattern is different from a width of an upper surface of the second lower pattern, and wherein a number of first sheet patterns is different from a number of second sheet patterns.
