Taiwan semiconductor manufacturing company, ltd. (20240113195). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jia-Ni Yu of New Taipei City (TW)

Lung-Kun Chu of New Taipei City (TW)

Chun-Fu Lu of Hsinchu (TW)

Chung-Wei Hsu of Baoshan Township (TW)

Mao-Lin Huang of Hsinchu City (TW)

Kuo-Cheng Chiang of Zhubei City (TW)

Chih-Hao Wang of Baoshan Township (TW)

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113195 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The semiconductor structure described in the patent application includes first nanostructures, a dielectric wall, a first liner layer, and a gate structure. Here are some key points to explain the innovation:

• The semiconductor structure consists of a plurality of first nanostructures positioned over a substrate.
• A dielectric wall is located adjacent to the first nanostructures.
• A first liner layer is present between the first nanostructures and the dielectric wall, with direct contact with the dielectric wall.
• A gate structure surrounds the first nanostructures, with the first liner layer in direct contact with a portion of the gate structure.

Potential Applications

The technology described in the patent application could be applied in the following areas:

• Semiconductor manufacturing
• Nanotechnology research
• Electronic device fabrication

Problems Solved

The innovation addresses the following issues:

• Improving the performance and efficiency of semiconductor devices
• Enhancing the integration of nanostructures in electronic components
• Minimizing leakage currents in semiconductor structures

Benefits

The technology offers the following benefits:

• Increased functionality of semiconductor devices
• Enhanced control over electronic properties
• Improved reliability and durability of electronic components

Potential Commercial Applications

The technology could be utilized in various commercial sectors, including:

• Consumer electronics
• Telecommunications
• Automotive industry

Possible Prior Art

One possible prior art related to this technology is the use of liner layers in semiconductor structures to improve device performance and reliability.

How does this technology compare to existing semiconductor structures in terms of efficiency and performance?

The patent application does not provide a direct comparison with existing semiconductor structures, so it is unclear how this innovation stacks up against current technologies.

What are the specific manufacturing processes involved in creating the semiconductor structure described in the patent application?

The patent application does not delve into the detailed manufacturing processes used to fabricate the semiconductor structure, leaving this aspect unanswered.

Original Abstract Submitted

semiconductor structures and methods for forming the same are provided. the semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. the semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. the semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.