Taiwan semiconductor manufacturing co., ltd. (20240128364). SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF simplified abstract

SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chun-Ming Lung of Hsinchu (TW)

Chung-Ting Ko of Hsinchu City (TW)

Ting-Hsiang Chang of New Taipei City (TW)

Sung-En Lin of Hsinchu County (TW)

Chi On Chui of Hsinchu City (TW)

SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128364 titled 'SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF

Simplified Explanation

A semiconductor device described in the patent application includes a fin structure, a metal gate stack, a barrier structure, and an epitaxial source/drain region. The fin structure is positioned over a substrate, the metal gate stack is located across the fin structure, and the barrier structure is situated on opposite sides of the metal gate stack. The barrier structure consists of one or more passivation layers and one or more barrier layers, with different materials used for each. The epitaxial source/drain region is positioned over the barrier structure.

• The semiconductor device includes a fin structure positioned over a substrate.
• A metal gate stack is located across the fin structure.
• The barrier structure, made up of passivation and barrier layers, is situated on opposite sides of the metal gate stack.
• The epitaxial source/drain region is positioned over the barrier structure.

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as high-performance computing, mobile devices, and communication systems.

Problems Solved

This innovation helps in enhancing the performance and efficiency of semiconductor devices by providing improved isolation and protection for the components, leading to better overall functionality and reliability.

Benefits

The use of passivation and barrier layers in the barrier structure helps in reducing leakage currents, improving device stability, and increasing the lifespan of the semiconductor device. This results in higher performance and better quality products for end-users.

Potential Commercial Applications

"Enhancing Semiconductor Device Performance with Barrier Structure and Epitaxial Source/Drain Region" - This technology has the potential for commercial applications in the semiconductor industry, particularly in the development of advanced integrated circuits and electronic devices.

Possible Prior Art

One possible prior art could be the use of passivation layers in semiconductor devices to improve device reliability and performance. Another could be the integration of epitaxial source/drain regions for enhancing device functionality and efficiency.

Unanswered Questions

== How does this technology compare to existing methods for improving semiconductor device performance? This article does not provide a direct comparison with existing methods or technologies in the semiconductor industry. It would be beneficial to understand the specific advantages and disadvantages of this innovation compared to traditional approaches.

== What are the potential challenges or limitations of implementing this technology in semiconductor manufacturing processes? The article does not address any potential challenges or limitations that may arise during the implementation of this technology. It would be important to explore factors such as cost, scalability, and compatibility with existing manufacturing processes to assess the feasibility of widespread adoption.

Original Abstract Submitted

a semiconductor device includes a fin structure, a metal gate stack, a barrier structure and an epitaxial source/drain region. the fin structure is over a substrate. the metal gate stack is across the fin structure. the barrier structure is on opposite sides of the metal gate stack. the barrier structure comprises one or more passivation layers and one or more barrier layers, and the one or more passivation layers have a material different from a material of the one or more barrier layers. the epitaxial source/drain region is over the barrier structure.