Taiwan semiconductor manufacturing co., ltd. (20240128267). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chun-Sheng Liang of Changhua County (TW)

Yu-San Chien of Hsinchu (TW)

Pin Chun Shen of Changhua County (TW)

Wen-Chiang Hong of Taipei City (TW)

Chun-Wing Yeung of Hsinchu (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128267 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The semiconductor device described in the abstract includes a unique structure with two semiconductor structures, each with gate structures and isolation blocks separating them. The first isolation block separates the gate structure of the first semiconductor structure into two portions, while the second isolation block separates the gate structures of the two semiconductor structures.

• The semiconductor device includes a first semiconductor structure with a first gate structure wrapping around first and second sheet structures, separated by a dielectric wall.
• A second semiconductor structure with a second gate structure wrapping around third sheet structures is also present.
• The first isolation block separates the first gate structure into two portions, one wrapping around the first sheet structures and the other around the second sheet structures.
• The second isolation block separates the gate structures of the two semiconductor structures.
• The first isolation block has a smaller extending depth compared to the second isolation block.

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as in mobile devices, computers, and other consumer electronics.

Problems Solved

This innovation helps in improving the performance and efficiency of semiconductor devices by providing better isolation between different structures, reducing interference and enhancing overall functionality.

Benefits

The benefits of this technology include increased reliability, improved performance, and enhanced integration capabilities in semiconductor devices. It also allows for more efficient use of space and resources in device manufacturing.

Potential Commercial Applications

The potential commercial applications of this technology could be in the semiconductor industry for developing next-generation electronic devices with higher performance and functionality.

Possible Prior Art

One possible prior art could be the use of isolation blocks in semiconductor devices to separate different structures and components for improved performance and functionality.

How does this technology compare to existing isolation techniques in semiconductor devices?

This article does not provide a direct comparison with existing isolation techniques in semiconductor devices. It would be interesting to know how this innovation improves upon or differs from current methods.

What are the specific manufacturing challenges associated with implementing this technology in semiconductor devices?

The article does not delve into the specific manufacturing challenges that may arise when implementing this technology. Understanding the hurdles and potential solutions could provide valuable insights into the practical application of this innovation.

Original Abstract Submitted

a semiconductor device includes a first semiconductor structure, a second semiconductor structure, a first isolation block and a second isolation block. the first semiconductor structure includes a first gate structure wrapping around a first sheet structures and a second sheet structures, and a first dielectric wall disposed between and separating the first and second sheet structures. the second semiconductor structure includes a second gate structure wrapping around third sheet structures. the first isolation block is disposed on the first dielectric wall of the first semiconductor structure and separates the first gate structure into a first gate portion wrapping around the first sheet structures and a second gate portion wrapping around the second sheet structures. the second isolation block is disposed between the first and second semiconductor structures and separates the first gate structure from the second gate structure. the first isolation block has an extending depth smaller than an extending depth of the second isolation block.