Taiwan semiconductor manufacturing company, ltd. (20240120337). SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Ta-Chun Lin of Hsinchu (TW)

Chih-Hung Hsieh of Hsinchu (TW)

Chun-Sheng Liang of Changhua (TW)

Wen-Chiang Hong of Taipei (TW)

Chun-Wing Yeung of Hsinchu (TW)

Kuo-Hua Pan of Hsinchu (TW)

Chih-Hao Chang of Hsinchu (TW)

Jhon Jhy Liaw of Hsinchu (TW)

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240120337 titled 'SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME

Simplified Explanation

The semiconductor device structure described in the abstract consists of multiple semiconductor layers stacked vertically and extending outwardly from a dielectric wall, with gate electrode layers surrounding the semiconductor layers.

• The structure includes first, second, and third semiconductor layers with different widths.
• The first gate electrode layer has a first conductivity type and surrounds the first semiconductor layers.
• The second gate electrode layer has a second conductivity type opposite to the first and surrounds the second semiconductor layers.

Potential Applications

This technology could be applied in:

• Advanced semiconductor devices
• High-performance electronic components

Problems Solved

This technology helps in:

• Enhancing the performance of semiconductor devices
• Improving the efficiency of electronic circuits

Benefits

The benefits of this technology include:

• Increased speed and reliability of electronic devices
• Reduction in power consumption

Potential Commercial Applications

A potential commercial application for this technology could be in:

• High-speed processors for computers and mobile devices

Possible Prior Art

One possible prior art for this technology could be:

• Semiconductor device structures with gate electrode layers surrounding semiconductor layers

Unanswered Questions

How does this technology compare to existing semiconductor structures in terms of performance and efficiency?

This question can be answered through comparative studies and performance testing of the new technology against existing structures.

What are the potential challenges in scaling up the production of semiconductor devices using this technology?

This question can be addressed through research on manufacturing processes and potential limitations in large-scale production.

Original Abstract Submitted

a semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.