US Patent Application 18106631. SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==
[[Category:Kijoon Kim of Suwon-si (KR)]]
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18106631 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor device with channel structures arranged vertically.
- The device includes gate insulation patterns that make contact with the channel structures.
- A gate electrode surrounds the channel structures and their sidewalls.
- Source and drain layers are located on the sides of the gate electrode.
- The channel structures consist of two layers of 2D materials stacked vertically.
- The first layer is made of a semiconducting TMD (transition metal dichalcogenide) with a first transition metal and chalcogen elements bonded to it.
- The second layer includes a second transition metal and a second chalcogen element bonded to it.
- The second transition metal in the second layer is covalently or ionically bonded to an element in the upper gate insulation pattern.
Original Abstract Submitted
A semiconductor device includes channel structures spaced apart in a vertical direction; lower/upper first gate insulation patterns contacting lower/upper surfaces of the channel structures; a gate electrode surrounding lower/upper surfaces and a sidewall of the channel structures; and source/drain layers at sides of the gate electrode, wherein the channel structures include first/second 2D material layers stacked in the vertical direction, the first 2D material layer includes a semiconducting TMD including a first transition metal and first chalcogen elements that are bonded at lower/upper sides of the first transition metal, the second 2D material layer includes a second transition metal and a second chalcogen element, the second chalcogen element being bonded at a lower side of the second transition metal, and the second transition metal included in the second 2D material layer is covalently or ionically bonded with an element of the upper first gate insulation pattern.
