Taiwan semiconductor manufacturing co., ltd. (20240096866). ACTIVE ZONES WITH OFFSET IN SEMICONDUCTOR CELL simplified abstract

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ACTIVE ZONES WITH OFFSET IN SEMICONDUCTOR CELL

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Guo-Huei Wu of Hsinchu (TW)

Chih-Liang Chen of Hsinchu (TW)

Li-Chun Tien of Hsinchu (TW)

ACTIVE ZONES WITH OFFSET IN SEMICONDUCTOR CELL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096866 titled 'ACTIVE ZONES WITH OFFSET IN SEMICONDUCTOR CELL

Simplified Explanation

The integrated circuit described in the patent application includes different distances between power rails and transistor alignment boundaries, improving performance and efficiency.

  • The integrated circuit includes first-type transistors aligned within a first-type active zone and second-type transistors aligned within a second-type active zone.
  • There are first and second power rails extending in a first direction, with different distances between the long edge of each power rail and the alignment boundary of the corresponding active zone.
  • The distances are along a second direction perpendicular to the first direction, optimizing the layout of the integrated circuit.

Potential Applications

The technology described in the patent application could be applied in:

  • Semiconductor manufacturing
  • Electronics industry
  • Integrated circuit design

Problems Solved

This technology addresses issues such as:

  • Power distribution inefficiencies
  • Transistor alignment challenges
  • Circuit layout optimization

Benefits

The benefits of this technology include:

  • Improved performance
  • Enhanced efficiency
  • Better power management

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Mobile devices
  • Computer hardware
  • Automotive electronics

Possible Prior Art

One possible prior art related to this technology is the use of power rails in integrated circuits to distribute power efficiently.

What are the specific technical details of the first-type and second-type transistors aligned within their respective active zones?

The specific technical details of the first-type and second-type transistors aligned within their respective active zones are not provided in the abstract. Further information on the characteristics, specifications, and configurations of these transistors would be necessary to fully understand the implementation of the technology.

How does the different distance between the power rails and transistor alignment boundaries impact the overall performance of the integrated circuit?

The abstract does not elaborate on how the different distance between the power rails and transistor alignment boundaries affects the overall performance of the integrated circuit. Understanding the specific reasons behind this design choice and its impact on performance would require a more in-depth analysis of the patent application.


Original Abstract Submitted

an integrated circuit includes first-type transistors aligned within a first-type active zone, second-type transistors aligned within a second-type active zone, a first power rail and a second power rail extending in a first direction. a first distance between the long edge of the first power rail and the first alignment boundary of the first-type active zone is different from a second distance between the long edge of the second power rail and the first alignment boundary of the second-type active zone. each of the first distance and the second distance is along a second direction which is perpendicular to the first direction.