Taiwan semiconductor manufacturing co., ltd. (20240097039). Crystallization of High-K Dielectric Layer simplified abstract

Crystallization of High-K Dielectric Layer

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chien-Chang Chen of New Taipei City (TW)

Crystallization of High-K Dielectric Layer - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240097039 titled 'Crystallization of High-K Dielectric Layer

Simplified Explanation

The present disclosure describes a semiconductor device with a crystalline high-k dielectric layer. The semiconductor structure includes a fin structure on a substrate, a gate dielectric layer on the fin structure, and a gate structure on the gate dielectric layer. A top portion of the gate dielectric layer is crystalline and includes a crystalline high-k dielectric material.

• Explanation of the patent/innovation:

- The semiconductor device features a high-k dielectric layer that is crystalline, providing enhanced performance and stability. - The gate dielectric layer is specifically designed to incorporate a crystalline high-k dielectric material, improving overall device efficiency. - The structure of the semiconductor device includes a fin structure and a gate structure, optimizing the functionality of the device.

Potential Applications

The technology described in this patent application could be applied in: - Advanced semiconductor devices - High-performance electronic components - Next-generation computing systems

Problems Solved

This technology addresses issues such as: - Improving the efficiency and stability of semiconductor devices - Enhancing the performance of electronic components - Meeting the demands of increasingly complex computing systems

Benefits

The benefits of this technology include: - Increased device performance and reliability - Enhanced functionality of electronic components - Potential for advancements in semiconductor technology

Potential Commercial Applications

The potential commercial applications of this technology could include: - Semiconductor manufacturing companies - Electronics industry for consumer electronics - Research and development in the field of semiconductor materials

Possible Prior Art

One possible prior art in this field could be the use of non-crystalline high-k dielectric materials in semiconductor devices, which may not offer the same level of performance and stability as the crystalline high-k dielectric layer described in this patent application.

How does the crystalline high-k dielectric layer impact the overall performance of the semiconductor device?

The crystalline high-k dielectric layer enhances the performance of the semiconductor device by providing improved stability and efficiency compared to non-crystalline materials. This allows for better control of electrical properties and reduced leakage currents, leading to enhanced device functionality.

What specific manufacturing processes are required to incorporate the crystalline high-k dielectric material into the gate dielectric layer?

The manufacturing processes involved in incorporating the crystalline high-k dielectric material may include deposition techniques, annealing processes, and material characterization methods to ensure the proper formation and integration of the material within the gate dielectric layer. These processes are crucial for achieving the desired performance benefits of the semiconductor device.

Original Abstract Submitted

the present disclosure describes a semiconductor device having a crystalline high-k dielectric layer. the semiconductor structure includes a fin structure on a substrate, a gate dielectric layer on the fin structure, and a gate structure on the gate dielectric layer. a top portion of the gate dielectric layer is crystalline and includes a crystalline high-k dielectric material.