Taiwan semiconductor manufacturing company, ltd. (20240113198). METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF simplified abstract
Contents
- 1 METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ko-Cheng Liu of Hsinchu City (TW)
Chang-Miao Liu of Hsinchu City (TW)
METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113198 titled 'METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF
Simplified Explanation
The abstract describes a method of fabricating a device with fins extending from a substrate, each fin containing semiconductor channel layers. An ion implantation process is performed on a first fin to introduce a dopant species into the topmost semiconductor channel layer, deactivating it.
- The method involves providing fins with semiconductor channel layers on a substrate.
- An ion implantation process is used to introduce dopant species into the topmost semiconductor channel layer of a fin.
- The ion implantation process deactivates the topmost semiconductor channel layer of the fin.
Potential Applications
This technology could be applied in the fabrication of advanced semiconductor devices, such as transistors and integrated circuits.
Problems Solved
This method helps in controlling the conductivity of the semiconductor channel layers in the fins, allowing for better performance and efficiency of the device.
Benefits
- Improved control over the dopant species in the semiconductor channel layers - Enhanced performance and efficiency of the fabricated device
Potential Commercial Applications
Optimizing semiconductor devices for various industries, including electronics, telecommunications, and computing.
Possible Prior Art
One possible prior art could be the use of ion implantation processes in semiconductor fabrication to introduce dopants into specific layers for controlling conductivity.
Unanswered Questions
How does this method compare to traditional methods of introducing dopants into semiconductor devices?
This method offers more precise control over the doping process, leading to improved performance and efficiency of the fabricated device.
What are the potential challenges or limitations of using ion implantation in semiconductor fabrication?
One potential challenge could be the need for specialized equipment and expertise to carry out the ion implantation process effectively.
Original Abstract Submitted
a method of fabricating a device includes providing a plurality of fins extending from a substrate. in some embodiments, each fin of the plurality of fins includes a plurality of semiconductor channel layers. in various example, the method further includes performing an ion implantation process into a first fin of the plurality of fins to introduce a dopant species into a topmost semiconductor channel layer of the plurality of semiconductor channel layers of the first fin. in some embodiments, the ion implantation process deactivates the topmost semiconductor channel layer of the plurality of semiconductor channel layers of the first fin.
