Taiwan semiconductor manufacturing company, ltd. (20240105787). SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Cheng-Wei Chang of Taipei (TW)
Shahaji B. More of Hsinchu (TW)
Yueh-Ching Pai of Taichung (TW)
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105787 titled 'SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF
Simplified Explanation
The abstract describes a method of forming a contact opening using selective ale operations to remove ild layer along an upper profile of a source/drain region, and then forming a source/drain contact feature having a concave bottom profile with increased contact area.
- Selective ale operations are used to remove ild layer along the upper profile of a source/drain region.
- A source/drain contact feature is formed with a concave bottom profile to increase contact area.
Potential Applications
This technology could be applied in semiconductor manufacturing processes to improve the efficiency and performance of electronic devices.
Problems Solved
This technology solves the problem of limited contact area in source/drain regions, which can impact the overall performance of electronic devices.
Benefits
The method allows for increased contact area in source/drain regions, leading to improved performance and efficiency of electronic devices.
Potential Commercial Applications
One potential commercial application of this technology could be in the production of advanced semiconductor devices for various electronic applications.
Possible Prior Art
Prior art may include methods for forming contact openings and source/drain contact features in semiconductor devices, but the specific technique of using selective ale operations to achieve a concave bottom profile with increased contact area may be novel.
Unanswered Questions
How does this method compare to traditional techniques for forming source/drain contact features?
This article does not provide a direct comparison to traditional techniques for forming source/drain contact features.
What are the specific parameters and requirements for implementing this method in semiconductor manufacturing processes?
The article does not detail the specific parameters and requirements for implementing this method in semiconductor manufacturing processes.
Original Abstract Submitted
embodiments of the present disclosure provide a method of forming a contact opening using selective ale operations to remove ild layer along an upper profile of a source/drain region, and then form a source/drain contact feature having a concave bottom profile with increased contact area.
