Taiwan semiconductor manufacturing co., ltd. (20240096994). MULTIPLE GATE PATTERNING METHODS TOWARDS FUTURE NANOSHEET SCALING simplified abstract
Contents
- 1 MULTIPLE GATE PATTERNING METHODS TOWARDS FUTURE NANOSHEET SCALING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MULTIPLE GATE PATTERNING METHODS TOWARDS FUTURE NANOSHEET SCALING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MULTIPLE GATE PATTERNING METHODS TOWARDS FUTURE NANOSHEET SCALING
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Kuo-Cheng Chiang of Hsinchu (TW)
MULTIPLE GATE PATTERNING METHODS TOWARDS FUTURE NANOSHEET SCALING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096994 titled 'MULTIPLE GATE PATTERNING METHODS TOWARDS FUTURE NANOSHEET SCALING
Simplified Explanation
The method described in the patent application involves forming nanostructures in different regions of a semiconductor device and depositing various layers to enhance its performance.
- Formation of first and second channel nanostructures in n-type and p-type device regions, respectively.
- Deposition of gate dielectric layer, n-type work function metal layer, and cap layer around the nanostructures.
- Selective removal of cap layer and n-type work function metal layer in the p-type device region.
- Deposition of p-type work function metal layer over the cap layer in the n-type device region.
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.
Problems Solved
This technology solves the problem of improving the performance and efficiency of semiconductor devices by optimizing the structure and materials used in their fabrication.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially lower power consumption in electronic devices.
Potential Commercial Applications
The technology could find commercial applications in the semiconductor industry for the production of high-performance electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar techniques in the fabrication of semiconductor devices, but with different materials or processes.
Unanswered Questions
How does this technology compare to existing methods for forming semiconductor devices?
This article does not provide a direct comparison between this technology and existing methods in the semiconductor industry.
What are the specific performance improvements achieved by implementing this method?
The article does not detail the specific performance improvements achieved by implementing this method compared to traditional semiconductor fabrication techniques.
Original Abstract Submitted
a method for forming a semiconductor device is provided. the method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. the cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. the method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. the p-type work function metal layer merges in the second spaces.
