Taiwan semiconductor manufacturing co., ltd. (20240096997). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Po-Chin Chang of Taichung (TW)
Pinyen Lin of Rochester NY (US)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096997 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The present disclosure relates to semiconductor device structures and methods of forming the same, including a structure with different silicide layers and conductive features.
- First source/drain region in pfet region
- Second source/drain region in nfet region with dipole region
- Different silicide layers on source/drain regions and dipole region
- Conductive features over the source/drain regions
- Interconnect structure on the conductive features
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the development of advanced and efficient semiconductor devices.
Problems Solved
This technology addresses the need for improved semiconductor device structures with optimized silicide layers and conductive features for enhanced performance and reliability.
Benefits
The benefits of this technology include increased efficiency, improved performance, and enhanced reliability of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the manufacturing of high-performance integrated circuits and other semiconductor devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar silicide layers and conductive features in semiconductor device structures for improved performance.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and reliability?
This article does not provide a direct comparison with existing semiconductor device structures, so it is unclear how this technology stacks up against current solutions.
What specific materials are used in the different silicide layers mentioned in the abstract?
The abstract mentions that the first, second, and third silicide layers include different materials, but it does not specify what these materials are.
Original Abstract Submitted
embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. the structure includes a first source/drain region disposed in a pfet region and a second source/drain region disposed in an nfet region. the second source/drain region comprises a dipole region. the structure further includes a first silicide layer disposed on and in contact with the first source/drain region, a second silicide layer disposed on and in contact with the first silicide layer, and a third silicide layer disposed on and in contact with the dipole region of the second source/drain region. the first, second, and third silicide layers include different materials. the structure further includes a first conductive feature disposed over the first source/drain region, a second conductive feature disposed over the second source/drain region, and an interconnect structure disposed on the first and second conductive features.
