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Category:H01L21/28
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Pages in category "H01L21/28"
The following 126 pages are in this category, out of 126 total.
1
- 17381006. INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSIVATION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17383435. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17455941. STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET simplified abstract (International Business Machines Corporation)
- 17461714. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17524884. SELECTIVE DEPOSITION ON METALS USING POROUS LOW-K MATERIALS simplified abstract (International Business Machines Corporation)
- 17545610. STACKED FETS WITH NON-SHARED WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548913. NANOSHEET DEVICE WITH VERTICAL BLOCKER FIN simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17581787. INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GATE METAL CUT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17585932. SEMICONDUCTOR DIES INCLUDING LOW AND HIGH WORKFUNCTION SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17700998. METAL GATE FIN ELECTRODE STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17741270. SEMICONDUCTOR DEVICES WITH METAL INTERCALATED HIGH-K CAPPING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17748291. TRANSISTOR CAPABLE OF ELECTRICALLY CONTROLLING A THRESHOLD VOLTAGE AND SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17809030. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17833749. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Micron Technology, Inc.)
- 17836399. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17839724. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17849154. DEVICE WITH MODIFIED WORK FUNCTION LAYER AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17852658. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17887122. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17892415. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17936934. METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17958805. SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17974871. PLANARIZATION APPARATUS AND ARTICLE MANUFACTURING METHOD simplified abstract (CANON KABUSHIKI KAISHA)
- 18053157. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18060372. DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18100302. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18149734. VERTICALLY STACKED FeFETS WITH COMMON CHANNEL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18150809. SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18150861. Volume-less Fluorine Incorporation Method simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18151575. METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152938. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18153571. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18153597. AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157906. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18180720. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18235740. Ferroelectric Assemblies and Methods of Forming Ferroelectric Assemblies simplified abstract (Micron Technology, Inc.)
- 18346977. METHOD OF REDUCING VOIDS AND SEAMS IN TRENCH STRUCTURES BY FORMING SEMI-AMORPHOUS POLYSILICON simplified abstract (Texas Instruments Incorporated)
- 18360471. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18370543. VERTICAL MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18388419. Gate Structures For Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18397700. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18459962. NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract (Kioxia Corporation)
- 18466223. SEMICONDUCTOR ELEMENT WITH SHIELDING simplified abstract (Robert Bosch GmbH)
- 18468394. THIN FILM STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18486493. DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18510991. CONTROL GATE STRAP LAYOUT TO IMPROVE A WORD LINE ETCH PROCESS WINDOW simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18513042. ELECTRONIC DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18515536. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18515912. BOUNDARY DESIGN FOR HIGH-VOLTAGE INTEGRATION ON HKMG TECHNOLOGY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516521. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18521404. METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521584. FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522265. METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18527024. PHOTO MASK AND LITHOGRAPHY METHOD USING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
B
I
- Intel corporation (20240105452). GATE CUTS WITH SELF-FORMING POLYMER LAYER simplified abstract
- Intel corporation (20240105453). HIGH ASPECT RATIO METAL GATE CUTS simplified abstract
- Intel corporation (20240105520). TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240105811). FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPERATURE OPERATION simplified abstract
- Intel corporation (20240105860). LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS simplified abstract
- Intel corporation (20240112916). METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract
- Intel corporation (20240113128). HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS simplified abstract
- Intel Corporation patent applications on April 4th, 2024
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on January 25th, 2024
- Intel Corporation patent applications on March 28th, 2024
- International business machines corporation (20240105606). BACKSIDE POWER RAIL WITH TIGHT SPACE simplified abstract
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 28th, 2024
K
M
S
- SAMSUNG DISPLAY CO., LTD. patent applications on January 25th, 2024
- Samsung electronics co., ltd. (20240128347). SEMICONDUCTOR DEVICE simplified abstract
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 14th, 2024
- SK hynix Inc. patent applications on January 18th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240096628). PHOTO MASK AND LITHOGRAPHY METHOD USING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096630). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096883). METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096884). METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096979). SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097005). AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097033). FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240099024). SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240105454). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105795). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240120203). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240121965). VERTICALLY STACKED FeFETS WITH COMMON CHANNEL simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 11th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
- Texas Instruments Incorporated patent applications on February 1st, 2024
U
- US Patent Application 17804530. MICROELECTRONIC DEVICES INCLUDING STACK STRUCTURES HAVING DOPED INTERFACIAL REGIONS, AND RELATED SYSTEMS AND METHODS simplified abstract
- US Patent Application 18181229. FERROELECTRIC-BASED MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 18227744. GATE STRUCTURES FOR SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18230712. SURFACE OXIDATION CONTROL OF METAL GATES USING CAPPING LAYER simplified abstract
- US Patent Application 18245098. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE simplified abstract
- US Patent Application 18347480. GATE STRUCTURE AND METHOD simplified abstract
- US Patent Application 18358609. Method of Forming a Semiconductor Device by Driving Hydrogen into a Dielectric Layer from Another Dielectric Layer simplified abstract
- US Patent Application 18359280. Semiconductor Device With Fish Bone Structure And Methods Of Forming The Same simplified abstract
- US Patent Application 18359507. Semiconductor Device and Method of Manufacturing simplified abstract
- US Patent Application 18359747. REPLACEMENT GATE PROCESS FOR SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18360259. Method for Improving Surface of Semiconductor Device simplified abstract
- US Patent Application 18361758. GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGATIVE TRANSCONDUCTANCE simplified abstract
- US Patent Application 18361815. SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18363439. MULTI-LAYERED INSULATING FILM STACK simplified abstract
- US Patent Application 18363881. FUSI GATED DEVICE FORMATION simplified abstract
- US Patent Application 18366871. GATE STRUCTURE AND METHOD OF FORMING SAME simplified abstract
- US Patent Application 18446771. INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME simplified abstract
- US Patent Application 18447153. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18447239. HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER simplified abstract
- US Patent Application 18447685. PARTIAL METAL GRAIN SIZE CONTROL TO IMPROVE CMP LOADING EFFECT simplified abstract