18527024. PHOTO MASK AND LITHOGRAPHY METHOD USING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 PHOTO MASK AND LITHOGRAPHY METHOD USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PHOTO MASK AND LITHOGRAPHY METHOD USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
PHOTO MASK AND LITHOGRAPHY METHOD USING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chung-Kai Huang of Tainan (TW)
Ko-Pin Kao of Taichung City (TW)
Ching-Yen Hsaio of Tainan City (TW)
PHOTO MASK AND LITHOGRAPHY METHOD USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18527024 titled 'PHOTO MASK AND LITHOGRAPHY METHOD USING THE SAME
Simplified Explanation
The abstract describes a photo mask for correcting optical proximity effects in a photolithography process, featuring device features, a first assist feature, and a second assist feature.
- The photo mask includes device features in a patterning region of a device region.
- A first assist feature is located in the patterning region and is used to correct optical proximity effects.
- A second assist feature is present in a non-patterning region of the device region and serves as a sub-resolution correction feature.
- The second assist feature is positioned at a greater distance from the device features compared to the distance between adjacent device features.
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for improving the accuracy and precision of photolithography processes.
Problems Solved
This technology addresses the issue of optical proximity effects in photolithography, which can lead to inaccuracies in the patterning of device features on semiconductor devices.
Benefits
The use of the photo mask with first and second assist features can enhance the quality of semiconductor devices by reducing optical proximity effects and improving the overall patterning process.
Potential Commercial Applications
One potential commercial application of this technology could be in the production of advanced semiconductor devices with high precision and performance.
Possible Prior Art
One possible prior art could be the use of optical proximity correction (OPC) techniques in photolithography processes to improve pattern fidelity and resolution.
Unanswered Questions
How does this technology compare to existing solutions for correcting optical proximity effects in photolithography processes?
This technology offers a unique approach by incorporating both first and second assist features in the photo mask, potentially providing more effective correction of optical proximity effects compared to traditional methods.
What are the potential limitations or challenges in implementing this technology in semiconductor manufacturing processes?
One potential challenge could be the complexity of designing and fabricating photo masks with multiple assist features, which may require specialized equipment and expertise. Additionally, the impact of these assist features on overall process efficiency and yield rates would need to be carefully evaluated.
Original Abstract Submitted
A photo mask includes a plurality of device features, a first assist feature, and a second assist feature. The device features are in a patterning region of a device region. The first assist feature are in the patterning region and adjacent to the device features. The first assist feature is for correcting an optical proximity effect in a photolithography process. The second assist feature is in a non-patterning region of the device region. The second assist feature is a sub-resolution correction feature, and a first distance between the second assist feature and one of the device features closest to the second assist feature is greater than a second distance between adjacent two of the device features.
