18235740. Ferroelectric Assemblies and Methods of Forming Ferroelectric Assemblies simplified abstract (Micron Technology, Inc.)

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Ferroelectric Assemblies and Methods of Forming Ferroelectric Assemblies

Organization Name

Micron Technology, Inc.

Inventor(s)

Albert Liao of Boise ID (US)

Manzar Siddik of Boise ID (US)

Ferroelectric Assemblies and Methods of Forming Ferroelectric Assemblies - A simplified explanation of the abstract

This abstract first appeared for US patent application 18235740 titled 'Ferroelectric Assemblies and Methods of Forming Ferroelectric Assemblies

Simplified Explanation

The patent application describes ferroelectric assemblies and a method of forming them. Here are the key points:

  • The invention involves a capacitor with a ferroelectric insulative material between two electrodes.
  • A metal oxide with a thickness of less than or equal to about 30 Å is placed between the second electrode and the ferroelectric insulative material.
  • The method of forming the assembly includes the steps of:
 * Creating a first capacitor electrode on a semiconductor-containing base.
 * Applying ferroelectric insulative material over the first electrode.
 * Depositing a metal-containing material over the ferroelectric insulative material.
 * Oxidizing the metal-containing material to form a metal oxide.
 * Creating a second electrode over the metal oxide.

Potential applications of this technology:

  • Memory devices: The ferroelectric assemblies can be used in non-volatile memory devices, such as ferroelectric random-access memory (FeRAM) or ferroelectric tunnel junctions (FTJ).
  • Sensors: The ferroelectric assemblies can be utilized in various sensors, such as pressure sensors or temperature sensors.
  • Energy storage: The capacitors with ferroelectric insulative material can be employed in energy storage devices, such as supercapacitors or batteries.

Problems solved by this technology:

  • Improved performance: The use of a metal oxide layer between the ferroelectric insulative material and the second electrode enhances the performance and stability of the assembly.
  • Reduced leakage current: The metal oxide layer helps to minimize leakage current, improving the efficiency of the capacitor.
  • Compatibility with semiconductor technology: The method of forming the assembly is compatible with semiconductor fabrication processes, allowing for integration with other electronic components.

Benefits of this technology:

  • Enhanced memory capabilities: The ferroelectric assemblies provide high-density, non-volatile memory storage with fast read and write operations.
  • Improved sensor performance: The ferroelectric assemblies offer high sensitivity and accuracy in sensing applications.
  • Increased energy storage capacity: The capacitors with ferroelectric insulative material provide high energy density and long cycle life in energy storage devices.


Original Abstract Submitted

Some embodiments include ferroelectric assemblies. Some embodiments include a capacitor which has ferroelectric insulative material between a first electrode and a second electrode. The capacitor also has a metal oxide between the second electrode and the ferroelectric insulative material. The metal oxide has a thickness of less than or equal to about 30 Å. Some embodiments include a method of forming an assembly. A first capacitor electrode is formed over a semiconductor-containing base. Ferroelectric insulative material is formed over the first electrode. A metal-containing material is formed over the ferroelectric insulative material. The metal-containing material is oxidized to form a metal oxide from the metal-containing material. A second electrode is formed over the metal oxide.

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