Taiwan semiconductor manufacturing co., ltd. (20240099024). SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Meng-Han Lin of Hsinchu City (TW)

Chia-En Huang of Xinfeng Township (TW)

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240099024 titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The semiconductor device described in the patent application consists of a first transistor, a second transistor, and a memory component. The first transistor includes a first silicon layer, a high-k gate dielectric layer, a first metal gate, and first source/drain regions. The second transistor includes a second silicon layer, a first silicon oxide layer, a plurality of first doped silicon gates, a plurality of second doped silicon gates, and second source/drain regions. The memory component is located above the transistors and is electrically coupled to the second source/drain region.

• The semiconductor device includes a first transistor with a high-k gate dielectric layer and a first metal gate.
• The second transistor has a plurality of first and second doped silicon gates.
• The memory component is electrically coupled to the second source/drain region.

Potential Applications

The technology described in the patent application could be applied in:

• Advanced electronic devices
• Memory storage systems
• Semiconductor manufacturing industry

Problems Solved

This technology helps in:

• Improving transistor performance
• Enhancing memory component integration
• Increasing overall device efficiency

Benefits

The benefits of this technology include:

• Higher speed and efficiency in electronic devices
• Enhanced memory storage capabilities
• Improved semiconductor manufacturing processes

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Consumer electronics
• Data storage devices
• Semiconductor fabrication industry

Possible Prior Art

One possible prior art related to this technology is the use of high-k gate dielectric layers in semiconductor devices to improve performance and reduce power consumption.

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research and testing would be needed to make a comprehensive comparison.

What are the potential challenges in implementing this technology on a large scale in the semiconductor industry?

The article does not address the potential challenges in implementing this technology on a large scale in the semiconductor industry. Factors such as cost, scalability, and compatibility with existing manufacturing processes could pose challenges that need to be explored further.

Original Abstract Submitted

a semiconductor device includes a first transistor, a second transistor, and a memory component. the first transistor includes a first silicon layer, a high-k gate dielectric layer above the first silicon layer, a first metal gate above the high-k gate dielectric layer, and first source/drain regions within the first silicon layer. the second transistor includes a second silicon layer, a first silicon oxide layer above the second silicon layer, a plurality of first doped silicon gates above the first silicon oxide layer, a plurality of second doped silicon gates above the first silicon oxide layer and alternately arranged with the plurality of first doped silicon gates, and second source/drain regions within the second silicon layer. the memory component is above the first and second transistors, and electrically coupled to the second source or drain region.