18510991. CONTROL GATE STRAP LAYOUT TO IMPROVE A WORD LINE ETCH PROCESS WINDOW simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

CONTROL GATE STRAP LAYOUT TO IMPROVE A WORD LINE ETCH PROCESS WINDOW

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yu-Ling Hsu of Tainan City (TW)

Ping-Cheng Li of Kaohsiung City (TW)

Hung-Ling Shih of Tainan City (TW)

Po-Wei Liu of Tainan City (TW)

Wen-Tuo Huang of Tainan City (TW)

Yong-Shiuan Tsair of Tainan City (TW)

Chia-Sheng Lin of Tainan City (TW)

Shih Kuang Yang of Tainan City (TW)

CONTROL GATE STRAP LAYOUT TO IMPROVE A WORD LINE ETCH PROCESS WINDOW - A simplified explanation of the abstract

This abstract first appeared for US patent application 18510991 titled 'CONTROL GATE STRAP LAYOUT TO IMPROVE A WORD LINE ETCH PROCESS WINDOW

Simplified Explanation

The patent application is focused on a control gate layout that enhances the etch process window for word lines in an integrated chip memory array.

• Integrated chip comprises memory array, erase gate, word line, and control gate
• Control gate is elongated along a row, positioned between and borders erase gate and word line
• Control gate has a pad region protruding towards erase gate and word line
• Width of pad region is spread between word-line and erase-gate sides of control gate

Potential Applications

• Semiconductor manufacturing
• Memory chip production
• Integrated circuit design

Problems Solved

• Improving etch process window for word lines
• Enhancing control gate layout efficiency
• Optimizing memory array performance

Benefits

• Increased reliability of memory arrays
• Enhanced chip performance
• Improved manufacturing process efficiency

Original Abstract Submitted

Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.