17748291. TRANSISTOR CAPABLE OF ELECTRICALLY CONTROLLING A THRESHOLD VOLTAGE AND SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
TRANSISTOR CAPABLE OF ELECTRICALLY CONTROLLING A THRESHOLD VOLTAGE AND SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR
Organization Name
Inventor(s)
Seonhaeng Lee of Hwaseong-si (KR)
TRANSISTOR CAPABLE OF ELECTRICALLY CONTROLLING A THRESHOLD VOLTAGE AND SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 17748291 titled 'TRANSISTOR CAPABLE OF ELECTRICALLY CONTROLLING A THRESHOLD VOLTAGE AND SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR
Simplified Explanation
The abstract describes a transistor design that includes a gate structure, impurity regions, and a threshold voltage controlling line.
- The transistor has a gate structure with a gate insulation layer and a gate electrode.
- There are two impurity regions located at the upper portion of the substrate, one adjacent to each sidewall of the gate structure.
- A first threshold voltage controlling line is positioned above the substrate and faces at least a portion of the first impurity region.
- The first threshold voltage controlling line is made of a conductive material and extends in a direction perpendicular to the direction of the first impurity region.
Potential applications of this technology:
- This transistor design can be used in various electronic devices, such as computers, smartphones, and tablets.
- It can be applied in integrated circuits, allowing for faster and more efficient processing of data.
- The design can be utilized in power amplifiers, memory devices, and other semiconductor devices.
Problems solved by this technology:
- The transistor design helps to improve the performance and efficiency of electronic devices.
- It addresses the need for smaller and more compact transistors, allowing for higher density integration.
- The inclusion of the threshold voltage controlling line helps to enhance the control and stability of the transistor.
Benefits of this technology:
- The transistor design offers improved speed and performance in electronic devices.
- It allows for higher integration density, enabling the production of smaller and more powerful devices.
- The inclusion of the threshold voltage controlling line enhances the control and stability of the transistor, leading to better overall device performance.
Original Abstract Submitted
A transistor includes: a gate structure disposed on a substrate, and including a gate insulation layer and a gate electrode; a first impurity region disposed at an upper portion of a substrate and adjacent to a first sidewall of the gate structure; a second impurity region disposed at an upper portion of the substrate and adjacent to a second sidewall opposite to the first sidewall of the gate structure; and a first threshold voltage controlling line spaced apart from the substrate, wherein the first threshold voltage controlling line faces at least a portion of the first impurity region, wherein the first threshold voltage controlling line includes a conductive material, and wherein the first threshold voltage controlling line extends in a direction that crosses a direction in which the first impurity region extends.
