US Patent Application 18360259. Method for Improving Surface of Semiconductor Device simplified abstract
Contents
Method for Improving Surface of Semiconductor Device
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Jung-Tang Wu of Kaohsiung City (TW)
Szu-Hua Wu of Zhubei City (TW)
Chin-Szu Lee of Taoyuan City (TW)
Yao-Shien Huang of Hsinchu (TW)
Method for Improving Surface of Semiconductor Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 18360259 titled 'Method for Improving Surface of Semiconductor Device
Simplified Explanation
The patent application describes a method of forming a semiconductor structure.
- The method involves forming a first top electrode (TE) layer over a magnetic tunnel junction (MTJ) layer.
- After forming the first TE layer, a smoothing treatment is performed on it in situ.
- The purpose of the smoothing treatment is to remove spike point defects from the first TE layer.
- The method also allows for the formation of additional TE layers over the first TE layer.
Original Abstract Submitted
A method of forming a semiconductor structure includes forming a first top electrode (TE) layer over a magnetic tunnel junction (MTJ) layer and performing a smoothing treatment on the first TE layer. The smoothing treatment is performed in situ after the forming first TE layer. The smoothing treatment removes spike point defects from the first TE layer. Additional TE layers may be formed over the first TE layer.
