Taiwan semiconductor manufacturing company, ltd. (20240105454). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Tung-Ying Lee of Hsinchu City (TW)
Wei-Sheng Yun of Taipei City (TW)
Shao-Ming Yu of Hsinchu County (TW)
Meng-Zhan Li of Changhua County (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105454 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The method described in the patent application involves forming a low-dimensional material (LDM) layer on a semiconductor substrate, performing a plasma treatment on the LDM layer to transform at least one sublayer into an oxide layer, and then disposing at least one electrode over the oxide layer.
- Formation of a low-dimensional material (LDM) layer on a semiconductor substrate
- Performing a plasma treatment on the LDM layer to transform at least one sublayer into an oxide layer
- Plasma treatment is conducted under a temperature equivalent to or lower than about 80 degrees Celsius
- Disposing at least one electrode over the oxide layer
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as transistors, sensors, and memory devices.
Problems Solved
This technology solves the problem of efficiently transforming low-dimensional materials into oxide layers at low temperatures, which is crucial for the development of high-performance semiconductor devices.
Benefits
The benefits of this technology include improved device performance, reduced manufacturing costs, and enhanced reliability of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology include the production of next-generation electronic devices, advanced sensors, and high-speed communication systems.
Possible Prior Art
One possible prior art related to this technology could be the use of plasma treatments in semiconductor device manufacturing processes to modify material properties and enhance device performance.
Unanswered Questions
How does the plasma treatment affect the properties of the oxide layer?
The article does not provide detailed information on how the plasma treatment specifically impacts the properties of the oxide layer formed on the low-dimensional material.
What are the specific semiconductor devices that can benefit from this method?
The article does not specify the types of semiconductor devices that can be manufactured using this method and the potential improvements in their performance.
Original Abstract Submitted
a method for manufacturing a semiconductor device is described. the method includes the following steps. a low-dimensional material (ldm) layer is formed on a semiconductor substrate, wherein the ldm layer includes sublayers stacked upon one another. a plasma treatment is performed to the ldm layer to transform at least one sublayer into an oxide layer, wherein the plasma treatment is performed under a temperature equivalent to or lower than about 80 degrees celsius. at least one electrode is disposed over the oxide layer.
