Taiwan semiconductor manufacturing co., ltd. (20240096628). PHOTO MASK AND LITHOGRAPHY METHOD USING THE SAME simplified abstract
Contents
- 1 PHOTO MASK AND LITHOGRAPHY METHOD USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PHOTO MASK AND LITHOGRAPHY METHOD USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
PHOTO MASK AND LITHOGRAPHY METHOD USING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chung-Kai Huang of Tainan (TW)
Ko-Pin Kao of Taichung City (TW)
Ching-Yen Hsaio of Tainan City (TW)
PHOTO MASK AND LITHOGRAPHY METHOD USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096628 titled 'PHOTO MASK AND LITHOGRAPHY METHOD USING THE SAME
Simplified Explanation
The patent application describes a photo mask with device features, a first assist feature, and a second assist feature. The first assist feature corrects optical proximity effects, while the second assist feature is a sub-resolution correction feature.
- Device features are in a patterning region of a device region.
- First assist feature corrects optical proximity effects in photolithography process.
- Second assist feature is a sub-resolution correction feature.
- First assist feature is adjacent to device features in the patterning region.
- Second assist feature is in a non-patterning region of the device region.
- First distance between second assist feature and closest device feature is greater than second distance between adjacent device features.
Potential Applications
The technology could be applied in the semiconductor industry for improving the accuracy and resolution of photolithography processes.
Problems Solved
The technology addresses optical proximity effects and sub-resolution corrections in photolithography, enhancing the quality and precision of device fabrication.
Benefits
The technology improves the overall quality and resolution of device features, leading to more efficient and reliable semiconductor manufacturing processes.
Potential Commercial Applications
"Enhancing Photolithography Processes in Semiconductor Manufacturing"
Possible Prior Art
There may be prior art related to sub-resolution correction features in photolithography processes, but further research is needed to identify specific examples.
Unanswered Questions
How does this technology compare to existing methods for correcting optical proximity effects in photolithography?
The patent application does not provide a direct comparison with existing methods for correcting optical proximity effects in photolithography. Further research is needed to understand the unique advantages of this technology.
What are the potential limitations or challenges in implementing this technology in semiconductor manufacturing processes?
The patent application does not address potential limitations or challenges in implementing this technology. Further analysis is required to assess any obstacles that may arise during the integration of this innovation into existing manufacturing processes.
Original Abstract Submitted
a photo mask includes a plurality of device features, a first assist feature, and a second assist feature. the device features are in a patterning region of a device region. the first assist feature are in the patterning region and adjacent to the device features. the first assist feature is for correcting an optical proximity effect in a photolithography process. the second assist feature is in a non-patterning region of the device region. the second assist feature is a sub-resolution correction feature, and a first distance between the second assist feature and one of the device features closest to the second assist feature is greater than a second distance between adjacent two of the device features.
